Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

Jihye Choi, Hyeonseung Lee, Beomsic Jung, Jeong Hyun Woo, Ju Young Kim, Kyu Sung Lee, Jeung Hyun Jeong, Jea Young Choi, Won Mok Kim, Wook Seong Lee, Doo Seok Jeong, Taek Sung Lee, Doo Jin Choi, Inho Kim

Research output: Contribution to journalArticle

Abstract

This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.

Original languageEnglish
Article number275101
JournalJournal of Physics D: Applied Physics
Volume51
Issue number27
DOIs
Publication statusPublished - 2018 Jun 13

Fingerprint

Boron
Silicon solar cells
Phosphorus
phosphorus
Solar cells
boron
solar cells
Crystalline materials
emitters
Silicon
cells
Rapid thermal processing
boric acids
Boric acid
flexural strength
Bending tests
silicon
Open circuit voltage
short circuit currents
curing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Choi, J., Lee, H., Jung, B., Woo, J. H., Kim, J. Y., Lee, K. S., ... Kim, I. (2018). Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells. Journal of Physics D: Applied Physics, 51(27), [275101]. https://doi.org/10.1088/1361-6463/aabf6d
Choi, Jihye ; Lee, Hyeonseung ; Jung, Beomsic ; Woo, Jeong Hyun ; Kim, Ju Young ; Lee, Kyu Sung ; Jeong, Jeung Hyun ; Choi, Jea Young ; Kim, Won Mok ; Lee, Wook Seong ; Jeong, Doo Seok ; Lee, Taek Sung ; Choi, Doo Jin ; Kim, Inho. / Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells. In: Journal of Physics D: Applied Physics. 2018 ; Vol. 51, No. 27.
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abstract = "This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0{\%}. The efficiency has improved by 2{\%} compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.",
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Choi, J, Lee, H, Jung, B, Woo, JH, Kim, JY, Lee, KS, Jeong, JH, Choi, JY, Kim, WM, Lee, WS, Jeong, DS, Lee, TS, Choi, DJ & Kim, I 2018, 'Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells', Journal of Physics D: Applied Physics, vol. 51, no. 27, 275101. https://doi.org/10.1088/1361-6463/aabf6d

Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells. / Choi, Jihye; Lee, Hyeonseung; Jung, Beomsic; Woo, Jeong Hyun; Kim, Ju Young; Lee, Kyu Sung; Jeong, Jeung Hyun; Choi, Jea Young; Kim, Won Mok; Lee, Wook Seong; Jeong, Doo Seok; Lee, Taek Sung; Choi, Doo Jin; Kim, Inho.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 27, 275101, 13.06.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

AU - Choi, Jihye

AU - Lee, Hyeonseung

AU - Jung, Beomsic

AU - Woo, Jeong Hyun

AU - Kim, Ju Young

AU - Lee, Kyu Sung

AU - Jeong, Jeung Hyun

AU - Choi, Jea Young

AU - Kim, Won Mok

AU - Lee, Wook Seong

AU - Jeong, Doo Seok

AU - Lee, Taek Sung

AU - Choi, Doo Jin

AU - Kim, Inho

PY - 2018/6/13

Y1 - 2018/6/13

N2 - This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.

AB - This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.

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U2 - 10.1088/1361-6463/aabf6d

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JF - Journal Physics D: Applied Physics

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