Abstract
This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.
| Original language | English |
|---|---|
| Article number | 275101 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 51 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - 2018 Jun 13 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells. / Choi, Jihye; Lee, Hyeonseung; Jung, Beomsic; Woo, Jeong Hyun; Kim, Ju Young; Lee, Kyu Sung; Jeong, Jeung Hyun; Choi, Jea Young; Kim, Won Mok; Lee, Wook Seong; Jeong, Doo Seok; Lee, Taek Sung; Choi, Doo Jin; Kim, Inho.
In: Journal of Physics D: Applied Physics, Vol. 51, No. 27, 275101, 13.06.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells
AU - Choi, Jihye
AU - Lee, Hyeonseung
AU - Jung, Beomsic
AU - Woo, Jeong Hyun
AU - Kim, Ju Young
AU - Lee, Kyu Sung
AU - Jeong, Jeung Hyun
AU - Choi, Jea Young
AU - Kim, Won Mok
AU - Lee, Wook Seong
AU - Jeong, Doo Seok
AU - Lee, Taek Sung
AU - Choi, Doo Jin
AU - Kim, Inho
PY - 2018/6/13
Y1 - 2018/6/13
N2 - This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.
AB - This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 μm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm-2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 μm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.
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UR - http://www.scopus.com/inward/citedby.url?scp=85049338129&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aabf6d
DO - 10.1088/1361-6463/aabf6d
M3 - Article
AN - SCOPUS:85049338129
VL - 51
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 27
M1 - 275101
ER -