Cobalt and nickel atomic layer depositions for contact applications

Han Bo Ram Lee, Woo Hee Kim, Yongjun Park, Sunggi Baik, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Novel NH3-based Co thermal atomic layer deposition (TALD) process using Co(iPr-AMD)2 (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb) 2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages157-158
Number of pages2
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Conference

Conference2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period09/6/109/6/3

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Lee, H. B. R., Kim, W. H., Park, Y., Baik, S., & Kim, H. (2009). Cobalt and nickel atomic layer depositions for contact applications. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 157-158). [5090371] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090371