Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu; K. J. Thomas; Y. Lee; T. Vogt; E. S. Choi; V. F. Mitrović; R. P. Hermann; F. Grandjean; P. C. Canfield; J. W. Kim; A. I. Goldman; C. Petrovic

doi:10.1103/PhysRevB.77.085212

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Original language	English
Article number	085212
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.77.085212
Publication status	Published - 2008 Feb 27

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.77.085212

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title = "Colossal positive magnetoresistance in a doped nearly magnetic semiconductor",

abstract = "We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or {"}Kondo{"} semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.",

author = "Rongwei Hu and Thomas, {K. J.} and Y. Lee and T. Vogt and Choi, {E. S.} and Mitrovi{\'c}, {V. F.} and Hermann, {R. P.} and F. Grandjean and Canfield, {P. C.} and Kim, {J. W.} and Goldman, {A. I.} and C. Petrovic",

year = "2008",

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doi = "10.1103/PhysRevB.77.085212",

language = "English",

volume = "77",

journal = "Physical Review B-Condensed Matter",

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Colossal positive magnetoresistance in a doped nearly magnetic semiconductor. / Hu, Rongwei; Thomas, K. J.; Lee, Y.; Vogt, T.; Choi, E. S.; Mitrović, V. F.; Hermann, R. P.; Grandjean, F.; Canfield, P. C.; Kim, J. W.; Goldman, A. I.; Petrovic, C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 8, 085212, 27.02.2008.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

AU - Hu, Rongwei

AU - Thomas, K. J.

AU - Lee, Y.

AU - Vogt, T.

AU - Choi, E. S.

AU - Mitrović, V. F.

AU - Hermann, R. P.

AU - Grandjean, F.

AU - Canfield, P. C.

AU - Kim, J. W.

AU - Goldman, A. I.

AU - Petrovic, C.

PY - 2008/2/27

Y1 - 2008/2/27

N2 - We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

AB - We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

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DO - 10.1103/PhysRevB.77.085212

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SN - 0163-1829

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Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

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