Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic

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Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Original languageEnglish
Article number085212
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number8
DOIs
Publication statusPublished - 2008 Feb 27

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hu, R., Thomas, K. J., Lee, Y., Vogt, T., Choi, E. S., Mitrović, V. F., Hermann, R. P., Grandjean, F., Canfield, P. C., Kim, J. W., Goldman, A. I., & Petrovic, C. (2008). Colossal positive magnetoresistance in a doped nearly magnetic semiconductor. Physical Review B - Condensed Matter and Materials Physics, 77(8), [085212]. https://doi.org/10.1103/PhysRevB.77.085212