Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Original languageEnglish
Article number085212
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
Publication statusPublished - 2008 Feb 27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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