Combinatorial growth of si nanoribbons

Tae Eon Park, Ki Young Lee, Ilsoo Kim, Joonyeon Chang, Peter Voorhees, Heon-Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.

Original languageEnglish
Article number476
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Nanoribbons
Carbon Nanotubes
Silicon
Vapors
vapors
Nanowires
nanowires
silicon
catalysts
Catalysts
Liquids
liquids
Interfacial energy
Electron energy levels
surface energy
micrometers
Mirrors
mirrors
configurations

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Park, T. E., Lee, K. Y., Kim, I., Chang, J., Voorhees, P., & Choi, H-J. (2011). Combinatorial growth of si nanoribbons. Nanoscale Research Letters, 6, 1-6. [476]. https://doi.org/10.1186/1556-276X-6-476
Park, Tae Eon ; Lee, Ki Young ; Kim, Ilsoo ; Chang, Joonyeon ; Voorhees, Peter ; Choi, Heon-Jin. / Combinatorial growth of si nanoribbons. In: Nanoscale Research Letters. 2011 ; Vol. 6. pp. 1-6.
@article{0f054e0c268042f1b4842f61944ebbf4,
title = "Combinatorial growth of si nanoribbons",
abstract = "Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.",
author = "Park, {Tae Eon} and Lee, {Ki Young} and Ilsoo Kim and Joonyeon Chang and Peter Voorhees and Heon-Jin Choi",
year = "2011",
month = "12",
day = "1",
doi = "10.1186/1556-276X-6-476",
language = "English",
volume = "6",
pages = "1--6",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",

}

Park, TE, Lee, KY, Kim, I, Chang, J, Voorhees, P & Choi, H-J 2011, 'Combinatorial growth of si nanoribbons', Nanoscale Research Letters, vol. 6, 476, pp. 1-6. https://doi.org/10.1186/1556-276X-6-476

Combinatorial growth of si nanoribbons. / Park, Tae Eon; Lee, Ki Young; Kim, Ilsoo; Chang, Joonyeon; Voorhees, Peter; Choi, Heon-Jin.

In: Nanoscale Research Letters, Vol. 6, 476, 01.12.2011, p. 1-6.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Combinatorial growth of si nanoribbons

AU - Park, Tae Eon

AU - Lee, Ki Young

AU - Kim, Ilsoo

AU - Chang, Joonyeon

AU - Voorhees, Peter

AU - Choi, Heon-Jin

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.

AB - Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.

UR - http://www.scopus.com/inward/record.url?scp=84862956340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862956340&partnerID=8YFLogxK

U2 - 10.1186/1556-276X-6-476

DO - 10.1186/1556-276X-6-476

M3 - Article

VL - 6

SP - 1

EP - 6

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

M1 - 476

ER -