Combinatorial growth of si nanoribbons

Tae Eon Park, Ki Young Lee, Ilsoo Kim, Joonyeon Chang, Peter Voorhees, Heon Jin Choi

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4 Citations (Scopus)

Abstract

Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.

Original languageEnglish
Article number476
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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    Park, T. E., Lee, K. Y., Kim, I., Chang, J., Voorhees, P., & Choi, H. J. (2011). Combinatorial growth of si nanoribbons. Nanoscale Research Letters, 6, 1-6. [476]. https://doi.org/10.1186/1556-276X-6-476