Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm2V-1s-1, 1 to 2 x 107, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In0.50Ga0.28Sn 0.22Oδ and In0.60Ga 0.35-0.32Sn0.05-0.08Oδ. The TTFTs with In0.50Ga0.28Sn0.22Oδ channels showed a mobility as high as 11.5 Cm2V-1S-1 with an on/off current ratio of 1.4 x 107 and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)