Abstract
Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 2656-2659 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2008 Apr 25 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors. / Oh, Jungwoo; Majhi, Prashant; Lee, Hi Deok; Banerjee, Sanjay; Harris, Rusty; Tseng, Hsing Huang; Jammy, Raj.
In: Japanese journal of applied physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2656-2659.Research output: Contribution to journal › Article
TY - JOUR
T1 - Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors
AU - Oh, Jungwoo
AU - Majhi, Prashant
AU - Lee, Hi Deok
AU - Banerjee, Sanjay
AU - Harris, Rusty
AU - Tseng, Hsing Huang
AU - Jammy, Raj
PY - 2008/4/25
Y1 - 2008/4/25
N2 - Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
AB - Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
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U2 - 10.1143/JJAP.47.2656
DO - 10.1143/JJAP.47.2656
M3 - Article
AN - SCOPUS:54349126251
VL - 47
SP - 2656
EP - 2659
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 PART 2
ER -