TY - JOUR
T1 - Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors
AU - Oh, Jungwoo
AU - Majhi, Prashant
AU - Lee, Hi Deok
AU - Banerjee, Sanjay
AU - Harris, Rusty
AU - Tseng, Hsing Huang
AU - Jammy, Raj
PY - 2008/4/25
Y1 - 2008/4/25
N2 - Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
AB - Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
UR - http://www.scopus.com/inward/record.url?scp=54349126251&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54349126251&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.2656
DO - 10.1143/JJAP.47.2656
M3 - Article
AN - SCOPUS:54349126251
VL - 47
SP - 2656
EP - 2659
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 PART 2
ER -