Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors

Jungwoo Oh, Prashant Majhi, Hi Deok Lee, Sanjay Banerjee, Rusty Harris, Hsing Huang Tseng, Raj Jammy

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.

Original languageEnglish
Pages (from-to)2656-2659
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors'. Together they form a unique fingerprint.

  • Cite this