Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors

Jungwoo Oh, Prashant Majhi, Hi Deok Lee, Sanjay Banerjee, Rusty Harris, Hsing Huang Tseng, Raj Jammy

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical characteristics of metal-oxide-semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy (Eg), intrinsic carrier concentration (ni), and permittivity (∈). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance-voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.

Original languageEnglish
Pages (from-to)2656-2659
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Fingerprint

Epitaxial layers
Field effect transistors
metal oxide semiconductors
capacitors
Capacitors
field effect transistors
Electric potential
Substrates
Metals
Threshold voltage
Carrier concentration
Heterojunctions
Transistors
Energy gap
Permittivity
Capacitance
Doping (additives)
capacitance-voltage characteristics
Oxide semiconductors
caps

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Oh, Jungwoo ; Majhi, Prashant ; Lee, Hi Deok ; Banerjee, Sanjay ; Harris, Rusty ; Tseng, Hsing Huang ; Jammy, Raj. / Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 4 PART 2. pp. 2656-2659.
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Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors. / Oh, Jungwoo; Majhi, Prashant; Lee, Hi Deok; Banerjee, Sanjay; Harris, Rusty; Tseng, Hsing Huang; Jammy, Raj.

In: Japanese Journal of Applied Physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2656-2659.

Research output: Contribution to journalArticle

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AU - Oh, Jungwoo

AU - Majhi, Prashant

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AU - Banerjee, Sanjay

AU - Harris, Rusty

AU - Tseng, Hsing Huang

AU - Jammy, Raj

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