Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Min Soo Bae, Chuntaek Park, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

Original languageEnglish
Title of host publicationSMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-112
Number of pages4
ISBN (Print)9781538651520
DOIs
Publication statusPublished - 2018 Aug 13
Event15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018 - Prague, Czech Republic
Duration: 2018 Jul 22018 Jul 5

Other

Other15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018
CountryCzech Republic
CityPrague
Period18/7/218/7/5

Fingerprint

Drain current
Ballistics
ballistics
Model
Degeneracy
Modeling and Simulation
Injection
Inversion
Modulation
FinFET
Electron
inversions
injection
modulation
Electrons
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Instrumentation
  • Signal Processing
  • Electrical and Electronic Engineering
  • Logic

Cite this

Bae, M. S., Park, C., & Yun, I. (2018). Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. In SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (pp. 109-112). [8434905] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMACD.2018.8434905
Bae, Min Soo ; Park, Chuntaek ; Yun, Ilgu. / Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 109-112
@inproceedings{79649adef3d24ebca20b8a445fa233af,
title = "Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime",
abstract = "In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.",
author = "Bae, {Min Soo} and Chuntaek Park and Ilgu Yun",
year = "2018",
month = "8",
day = "13",
doi = "10.1109/SMACD.2018.8434905",
language = "English",
isbn = "9781538651520",
pages = "109--112",
booktitle = "SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Bae, MS, Park, C & Yun, I 2018, Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. in SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design., 8434905, Institute of Electrical and Electronics Engineers Inc., pp. 109-112, 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018, Prague, Czech Republic, 18/7/2. https://doi.org/10.1109/SMACD.2018.8434905

Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. / Bae, Min Soo; Park, Chuntaek; Yun, Ilgu.

SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc., 2018. p. 109-112 8434905.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

AU - Bae, Min Soo

AU - Park, Chuntaek

AU - Yun, Ilgu

PY - 2018/8/13

Y1 - 2018/8/13

N2 - In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

AB - In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

UR - http://www.scopus.com/inward/record.url?scp=85052522243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052522243&partnerID=8YFLogxK

U2 - 10.1109/SMACD.2018.8434905

DO - 10.1109/SMACD.2018.8434905

M3 - Conference contribution

AN - SCOPUS:85052522243

SN - 9781538651520

SP - 109

EP - 112

BT - SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Bae MS, Park C, Yun I. Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. In SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc. 2018. p. 109-112. 8434905 https://doi.org/10.1109/SMACD.2018.8434905