Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Min Soo Bae, Chuntaek Park, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

Original languageEnglish
Title of host publicationSMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-112
Number of pages4
ISBN (Print)9781538651520
DOIs
Publication statusPublished - 2018 Aug 13
Event15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018 - Prague, Czech Republic
Duration: 2018 Jul 22018 Jul 5

Publication series

NameSMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

Other

Other15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018
CountryCzech Republic
CityPrague
Period18/7/218/7/5

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Instrumentation
  • Signal Processing
  • Electrical and Electronic Engineering
  • Logic

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  • Cite this

    Bae, M. S., Park, C., & Yun, I. (2018). Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. In SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (pp. 109-112). [8434905] (SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMACD.2018.8434905