In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.
|Number of pages||8|
|Journal||IEEE Transactions on Nanotechnology|
|Publication status||Published - 2020|
Bibliographical noteFunding Information:
Manuscript received October 6, 2019; revised December 29, 2019, March 27, 2020, and July 21, 2020; accepted October 19, 2020. Date of publication October 29, 2020; date of current version December 8, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61404048, in part by National Natural Science Foundation of China under Grant 51877073, in part by Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant 20120161120012, and in part by Natural Science Foundation of Hunan Province, China under Grant 2015JJ3043. (Corresponding author: Linfeng Deng.) Linfeng Deng, Jin Li, Haiqing Huang, Jun Wang, Dong Cheng, and He Wen are with the College of Electrical and Information Engineering, Hunan University, Changsha 410082, China (e-mail: email@example.com; 1550692274@ qq.com; firstname.lastname@example.org; email@example.com; chengdongchina@163. com; firstname.lastname@example.org).
© 2002-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering