Compact I-V Model for Ambipolar Field-Effect Transistors with 2D Transition Metal Dichalcogenide as Semiconductor

Linfeng Deng; Jin Li; Qin Liu; Haiqing Huang; Jun Wang; Dong Cheng; He Wen; Seongil Im

doi:10.1109/TNANO.2020.3034658

Compact I-V Model for Ambipolar Field-Effect Transistors with 2D Transition Metal Dichalcogenide as Semiconductor

Linfeng Deng, Jin Li, Qin Liu, Haiqing Huang, Jun Wang, Dong Cheng, He Wen, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.

Original language	English
Article number	9244634
Pages (from-to)	841-848
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	19
DOIs	https://doi.org/10.1109/TNANO.2020.3034658
Publication status	Published - 2020

Bibliographical note

Funding Information:
Manuscript received October 6, 2019; revised December 29, 2019, March 27, 2020, and July 21, 2020; accepted October 19, 2020. Date of publication October 29, 2020; date of current version December 8, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61404048, in part by National Natural Science Foundation of China under Grant 51877073, in part by Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant 20120161120012, and in part by Natural Science Foundation of Hunan Province, China under Grant 2015JJ3043. (Corresponding author: Linfeng Deng.) Linfeng Deng, Jin Li, Haiqing Huang, Jun Wang, Dong Cheng, and He Wen are with the College of Electrical and Information Engineering, Hunan University, Changsha 410082, China (e-mail: lfdeng@hnu.edu.cn; 1550692274@ qq.com; hhq@hnu.edu.cn; junwang@hnu.edu.cn; chengdongchina@163. com; he_wen82@126.com).

Publisher Copyright:
© 2002-2012 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2020.3034658

Cite this

@article{41fb6514483f4035910b183ca97fcf68,

title = "Compact I-V Model for Ambipolar Field-Effect Transistors with 2D Transition Metal Dichalcogenide as Semiconductor",

abstract = "In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.",

author = "Linfeng Deng and Jin Li and Qin Liu and Haiqing Huang and Jun Wang and Dong Cheng and He Wen and Seongil Im",

note = "Funding Information: Manuscript received October 6, 2019; revised December 29, 2019, March 27, 2020, and July 21, 2020; accepted October 19, 2020. Date of publication October 29, 2020; date of current version December 8, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61404048, in part by National Natural Science Foundation of China under Grant 51877073, in part by Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant 20120161120012, and in part by Natural Science Foundation of Hunan Province, China under Grant 2015JJ3043. (Corresponding author: Linfeng Deng.) Linfeng Deng, Jin Li, Haiqing Huang, Jun Wang, Dong Cheng, and He Wen are with the College of Electrical and Information Engineering, Hunan University, Changsha 410082, China (e-mail: lfdeng@hnu.edu.cn; 1550692274@ qq.com; hhq@hnu.edu.cn; junwang@hnu.edu.cn; chengdongchina@163. com; he_wen82@126.com). Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2020",

doi = "10.1109/TNANO.2020.3034658",

language = "English",

volume = "19",

pages = "841--848",

journal = "IEEE Transactions on Nanotechnology",

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AU - Deng, Linfeng

AU - Li, Jin

AU - Liu, Qin

AU - Huang, Haiqing

AU - Wang, Jun

AU - Cheng, Dong

AU - Wen, He

AU - Im, Seongil

N1 - Funding Information: Manuscript received October 6, 2019; revised December 29, 2019, March 27, 2020, and July 21, 2020; accepted October 19, 2020. Date of publication October 29, 2020; date of current version December 8, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61404048, in part by National Natural Science Foundation of China under Grant 51877073, in part by Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant 20120161120012, and in part by Natural Science Foundation of Hunan Province, China under Grant 2015JJ3043. (Corresponding author: Linfeng Deng.) Linfeng Deng, Jin Li, Haiqing Huang, Jun Wang, Dong Cheng, and He Wen are with the College of Electrical and Information Engineering, Hunan University, Changsha 410082, China (e-mail: lfdeng@hnu.edu.cn; 1550692274@ qq.com; hhq@hnu.edu.cn; junwang@hnu.edu.cn; chengdongchina@163. com; he_wen82@126.com). Publisher Copyright: © 2002-2012 IEEE.

PY - 2020

Y1 - 2020

N2 - In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.

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Compact I-V Model for Ambipolar Field-Effect Transistors with 2D Transition Metal Dichalcogenide as Semiconductor

Abstract

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