Compact mm-Wave Bandpass Filters Using Silicon Integrated Passive Device Technology

Dong Min Kim, Byung Wook Min, Jong Min Yook

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this letter, a compact bandpass filter (BPF) using integrated passive device (IPD) technology is presented, which is based on a pair of coupled-line inductors. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to increase the number of resonators order. This structure is implemented by using a Si-based IPD process in which line inductors are located on a thick laminated organic (H = 40,μ with a ground metal for shielding of lossy silicon. The minimum insertion loss of two-resonator BPF is 1.1 dB, and cascaded two-resonator structure is 2.3 dB. The size of two-resonator and cascaded two-resonator BPFs, excluding the pads, are only 0.246 × 0.44 mm and 0.492 × 0.88 mm, respectively.

Original languageEnglish
Article number8824099
Pages (from-to)638-640
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number10
DOIs
Publication statusPublished - 2019 Oct

Bibliographical note

Funding Information:
Manuscript received July 23, 2019; accepted August 18, 2019. Date of publication September 4, 2019; date of current version October 7, 2019. This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE, South Korea) through the Industrial Strategic Technology Development Program (Development of Material Technology for Artificial Intelligence 3D IC Manufacturing) under Grant 20001147. (Corresponding author: Jong-Min Yook.) D.-M. Kim and J.-M. Yook are with the Department of ICT Device, Packaging Research Center, Korea Electronics Technology Institute, Seongnam 13509, South Korea (e-mail: radio@keti.re.kr).

Publisher Copyright:
© 2001-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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