Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

Byungkyu Song, Taehui Na, Hanwool Jeong, Seung H. Kang, Jung Pill Kim, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

Original languageEnglish
Title of host publicationISOCC 2014 - International SoC Design Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages112-113
Number of pages2
ISBN (Electronic)9781479951260
DOIs
Publication statusPublished - 2015 Apr 16
Event11th International SoC Design Conference, ISOCC 2014 - Jeju, Korea, Republic of
Duration: 2014 Nov 32014 Nov 6

Publication series

NameISOCC 2014 - International SoC Design Conference

Other

Other11th International SoC Design Conference, ISOCC 2014
CountryKorea, Republic of
CityJeju
Period14/11/314/11/6

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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    Song, B., Na, T., Jeong, H., Kang, S. H., Kim, J. P., & Jung, S. O. (2015). Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. In ISOCC 2014 - International SoC Design Conference (pp. 112-113). [7087593] (ISOCC 2014 - International SoC Design Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2014.7087593