Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

Byungkyu Song, Taehui Na, Hanwool Jeong, Seung H. Kang, Jung Pill Kim, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

Original languageEnglish
Title of host publicationISOCC 2014 - International SoC Design Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages112-113
Number of pages2
ISBN (Electronic)9781479951260
DOIs
Publication statusPublished - 2015 Jan 1
Event11th International SoC Design Conference, ISOCC 2014 - Jeju, Korea, Republic of
Duration: 2014 Nov 32014 Nov 6

Other

Other11th International SoC Design Conference, ISOCC 2014
CountryKorea, Republic of
CityJeju
Period14/11/314/11/6

Fingerprint

Transistors
Torque
Data storage equipment
Controllability
Substitution reactions
FinFET

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

Cite this

Song, B., Na, T., Jeong, H., Kang, S. H., Kim, J. P., & Jung, S. O. (2015). Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. In ISOCC 2014 - International SoC Design Conference (pp. 112-113). [7087593] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2014.7087593
Song, Byungkyu ; Na, Taehui ; Jeong, Hanwool ; Kang, Seung H. ; Kim, Jung Pill ; Jung, Seong Ook. / Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. ISOCC 2014 - International SoC Design Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 112-113
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abstract = "As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.",
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Song, B, Na, T, Jeong, H, Kang, SH, Kim, JP & Jung, SO 2015, Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. in ISOCC 2014 - International SoC Design Conference., 7087593, Institute of Electrical and Electronics Engineers Inc., pp. 112-113, 11th International SoC Design Conference, ISOCC 2014, Jeju, Korea, Republic of, 14/11/3. https://doi.org/10.1109/ISOCC.2014.7087593

Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. / Song, Byungkyu; Na, Taehui; Jeong, Hanwool; Kang, Seung H.; Kim, Jung Pill; Jung, Seong Ook.

ISOCC 2014 - International SoC Design Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 112-113 7087593.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

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Song B, Na T, Jeong H, Kang SH, Kim JP, Jung SO. Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. In ISOCC 2014 - International SoC Design Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 112-113. 7087593 https://doi.org/10.1109/ISOCC.2014.7087593