Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures

Chang Woo Choi, Arun Anand Prabu, Yu Min Kim, Sun Yoon, Kap Jin Kim, Cheolmin Park

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (7228 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100 nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric- metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.

Original languageEnglish
Article number182902
JournalApplied Physics Letters
Volume93
Issue number18
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by SRC/ERC Program of Korea Science and Engineering Foundation (KOSEF-R11-2005-065) and the Korea Research Foundation International Academic Exchange Program (KRF-2006-D00021). One of authors (C.P.) also wishes to thank the Korea Ministry of Commerce, Industry and Energy for their partial financial support on “The National Research Program for the 0.1 Terabit Non-volatile Memory Development.”

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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