We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (7228 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100 nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric- metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)