We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (7228 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100 nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric- metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.
Bibliographical noteFunding Information:
This work was supported by SRC/ERC Program of Korea Science and Engineering Foundation (KOSEF-R11-2005-065) and the Korea Research Foundation International Academic Exchange Program (KRF-2006-D00021). One of authors (C.P.) also wishes to thank the Korea Ministry of Commerce, Industry and Energy for their partial financial support on “The National Research Program for the 0.1 Terabit Non-volatile Memory Development.”
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)