Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of In situ nitridation

Wan Joo Maeng, Jae Woong Lee, Jae Min Myoung, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Ta2O5 and TaOxNy thin films were deposited by atomic layer deposition (ALD) from Ta(NMe2) 5 (FDMAT) with water, oxygen plasma, and nitrogen added oxygen plasma. The film properties were comparatively investigated focusing on the electrical properties from metal oxide semiconductor capacitor structure with 10 nm Ta2O5 or TaOxNy. The results show that plasma-enhanced ALD (PE-ALD) Ta2O5 film has better electrical properties including lower interface state density and leakage current than thermal ALD. Moreover, PE-ALD TaOxNy shows the best properties, indicating the beneficial effects of in situ nitridation. Especially, time dependent dielectric breakdown was significantly improved up to 4000 times of thermal ALD Ta2O5. These results show that, intentional in situ nitrogen incorporation with good electrical properties was successfully achieved by PE-ALD using nitrogen-oxygen mixture.

Original languageEnglish
Pages (from-to)3224-3228
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number5 B
DOIs
Publication statusPublished - 2007 May 17

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Nitridation
Atomic layer deposition
atomic layer epitaxy
Electric properties
electrical properties
Plasmas
oxygen plasma
Nitrogen
Oxygen
nitrogen
nitrogen plasma
convective flow
metal oxide semiconductors
Interface states
capacitors
Electric breakdown
leakage
Leakage currents
breakdown
Capacitors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of In situ nitridation",
abstract = "Ta2O5 and TaOxNy thin films were deposited by atomic layer deposition (ALD) from Ta(NMe2) 5 (FDMAT) with water, oxygen plasma, and nitrogen added oxygen plasma. The film properties were comparatively investigated focusing on the electrical properties from metal oxide semiconductor capacitor structure with 10 nm Ta2O5 or TaOxNy. The results show that plasma-enhanced ALD (PE-ALD) Ta2O5 film has better electrical properties including lower interface state density and leakage current than thermal ALD. Moreover, PE-ALD TaOxNy shows the best properties, indicating the beneficial effects of in situ nitridation. Especially, time dependent dielectric breakdown was significantly improved up to 4000 times of thermal ALD Ta2O5. These results show that, intentional in situ nitrogen incorporation with good electrical properties was successfully achieved by PE-ALD using nitrogen-oxygen mixture.",
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AU - Myoung, Jae Min

AU - Kim, Hyungjun

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