Comparative studies of HfO 
                        2
                        , Y 
                        2
                        O 
                        3
                        , and CeO 
                        2
                         insulators in metal-Nd 
                        2
                        Ti 
                        2
                        O 
                        7
                         ferroelectric-insulator-semiconductor structures

Woo Sic Kim; Hong Sub Lee; Hye Jung Choi; Sung Woong Chung; Hyung-Ho Park

doi:10.1080/00150193.2011.618375

Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures

Woo Sic Kim, Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung-Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

High-k insulator films of HfO ₂ , Y ₂ O ₃ , and CeO ₂ , were prepared on Nd ₂ Ti ₂ O ₇ (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO ₂ possesses a relatively low leakage current and a better retention property than Y ₂ O ₃ and CeO ₂ . The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

Original language	English
Pages (from-to)	45-53
Number of pages	9
Journal	Ferroelectrics
Volume	423
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2011.618375
Publication status	Published - 2011 Dec 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Kim, W. S., Lee, H. S., Choi, H. J., Chung, S. W., & Park, H-H. (2011). Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures Ferroelectrics, 423(1), 45-53. https://doi.org/10.1080/00150193.2011.618375

Kim, Woo Sic ; Lee, Hong Sub ; Choi, Hye Jung ; Chung, Sung Woong ; Park, Hyung-Ho. / Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures In: Ferroelectrics. 2011 ; Vol. 423, No. 1. pp. 45-53.

@article{91349a24778e4113952b1a057fc74937,

title = " Comparative studies of HfO 2 , Y 2 O 3 , and CeO 2 insulators in metal-Nd 2 Ti 2 O 7 ferroelectric-insulator-semiconductor structures ",

abstract = " High-k insulator films of HfO 2 , Y 2 O 3 , and CeO 2 , were prepared on Nd 2 Ti 2 O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2 O 3 and CeO 2 . The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.",

author = "Kim, {Woo Sic} and Lee, {Hong Sub} and Choi, {Hye Jung} and Chung, {Sung Woong} and Hyung-Ho Park",

year = "2011",

month = dec

day = "1",

doi = "10.1080/00150193.2011.618375",

language = "English",

volume = "423",

pages = "45--53",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

Kim, WS, Lee, HS, Choi, HJ, Chung, SW & Park, H-H 2011, ' Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures ', Ferroelectrics, vol. 423, no. 1, pp. 45-53. https://doi.org/10.1080/00150193.2011.618375

Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures . / Kim, Woo Sic; Lee, Hong Sub; Choi, Hye Jung; Chung, Sung Woong; Park, Hyung-Ho.

In: Ferroelectrics, Vol. 423, No. 1, 01.12.2011, p. 45-53.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Comparative studies of HfO 2 , Y 2 O 3 , and CeO 2 insulators in metal-Nd 2 Ti 2 O 7 ferroelectric-insulator-semiconductor structures

AU - Kim, Woo Sic

AU - Lee, Hong Sub

AU - Choi, Hye Jung

AU - Chung, Sung Woong

AU - Park, Hyung-Ho

PY - 2011/12/1

Y1 - 2011/12/1

N2 - High-k insulator films of HfO 2 , Y 2 O 3 , and CeO 2 , were prepared on Nd 2 Ti 2 O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2 O 3 and CeO 2 . The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

AB - High-k insulator films of HfO 2 , Y 2 O 3 , and CeO 2 , were prepared on Nd 2 Ti 2 O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2 O 3 and CeO 2 . The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

UR - http://www.scopus.com/inward/record.url?scp=84862957219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862957219&partnerID=8YFLogxK

U2 - 10.1080/00150193.2011.618375

DO - 10.1080/00150193.2011.618375

M3 - Article

AN - SCOPUS:84862957219

VL - 423

SP - 45

EP - 53

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1

ER -

Kim WS, Lee HS, Choi HJ, Chung SW, Park H-H. Comparative studies of HfO ₂ , Y ₂ O ₃ , and CeO ₂ insulators in metal-Nd ₂ Ti ₂ O ₇ ferroelectric-insulator-semiconductor structures Ferroelectrics. 2011 Dec 1;423(1):45-53. https://doi.org/10.1080/00150193.2011.618375

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10.1080/00150193.2011.618375