Comparative studies of HfO 2 , Y 2 O 3 , and CeO 2 insulators in metal-Nd 2 Ti 2 O 7 ferroelectric-insulator-semiconductor structures

Woo Sic Kim, Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung-Ho Park

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2 Citations (Scopus)

Abstract

High-k insulator films of HfO 2 , Y 2 O 3 , and CeO 2 , were prepared on Nd 2 Ti 2 O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2 O 3 and CeO 2 . The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

Original languageEnglish
Pages (from-to)45-53
Number of pages9
JournalFerroelectrics
Volume423
Issue number1
DOIs
Publication statusPublished - 2011 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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