Comparative studies of HfO 2, Y 2O 3, and CeO 2 insulators in metal-Nd 2Ti 2O 7 ferroelectric-insulator-semiconductor structures

Woo Sic Kim, Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


High-k insulator films of HfO 2, Y 2O 3, and CeO 2, were prepared on Nd 2Ti 2O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2O 3 and CeO 2. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

Original languageEnglish
Pages (from-to)45-53
Number of pages9
Issue number1
Publication statusPublished - 2011

Bibliographical note

Funding Information:
This work was supported by Hynix Semiconductor Inc. of Korea, and by the second stage of the Brain Korea 21 project in 2010.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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