Comparative studies of HfO 2, Y 2O 3, and CeO 2 insulators in metal-Nd 2Ti 2O 7 ferroelectric-insulator-semiconductor structures

Woo Sic Kim; Hong Sub Lee; Hye Jung Choi; Sung Woong Chung; Hyung Ho Park

doi:10.1080/00150193.2011.618375

Comparative studies of HfO ₂, Y ₂O ₃, and CeO ₂ insulators in metal-Nd ₂Ti ₂O ₇ ferroelectric-insulator-semiconductor structures

Woo Sic Kim, Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High-k insulator films of HfO ₂, Y ₂O ₃, and CeO ₂, were prepared on Nd ₂Ti ₂O ₇ (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO ₂ possesses a relatively low leakage current and a better retention property than Y ₂O ₃ and CeO ₂. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

Original language	English
Pages (from-to)	45-53
Number of pages	9
Journal	Ferroelectrics
Volume	423
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2011.618375
Publication status	Published - 2011

Bibliographical note

Funding Information:
This work was supported by Hynix Semiconductor Inc. of Korea, and by the second stage of the Brain Korea 21 project in 2010.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150193.2011.618375

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title = "Comparative studies of HfO 2, Y 2O 3, and CeO 2 insulators in metal-Nd 2Ti 2O 7 ferroelectric-insulator-semiconductor structures",

abstract = "High-k insulator films of HfO 2, Y 2O 3, and CeO 2, were prepared on Nd 2Ti 2O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2O 3 and CeO 2. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.",

author = "Kim, {Woo Sic} and Lee, {Hong Sub} and Choi, {Hye Jung} and Chung, {Sung Woong} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by Hynix Semiconductor Inc. of Korea, and by the second stage of the Brain Korea 21 project in 2010.",

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T1 - Comparative studies of HfO 2, Y 2O 3, and CeO 2 insulators in metal-Nd 2Ti 2O 7 ferroelectric-insulator-semiconductor structures

AU - Kim, Woo Sic

AU - Lee, Hong Sub

AU - Choi, Hye Jung

AU - Chung, Sung Woong

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by Hynix Semiconductor Inc. of Korea, and by the second stage of the Brain Korea 21 project in 2010.

PY - 2011

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AB - High-k insulator films of HfO 2, Y 2O 3, and CeO 2, were prepared on Nd 2Ti 2O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2O 3 and CeO 2. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.

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