High-k insulator films of HfO 2, Y 2O 3, and CeO 2, were prepared on Nd 2Ti 2O 7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. TheNT is a candidate ferroelectric material for use in a metal-ferroelectric- insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO 2 possesses a relatively low leakage current and a better retention property than Y 2O 3 and CeO 2. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET.
Bibliographical noteFunding Information:
This work was supported by Hynix Semiconductor Inc. of Korea, and by the second stage of the Brain Korea 21 project in 2010.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics