Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD

Kyu Hyun Bang, Deuk Kyu Hwang, Min Chang Jeong, Kee Sun Sohn, Jae Min Myoung

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

ZnO thin films were grown on c-plane sapphire and GaAs (001) substrates by metalorganic chemical vapor deposition. Atomic force microscopy and double-crystal X-ray diffractometry were utilized to investigate the structural properties of the ZnO films. The optical properties of ZnO films were also investigated in terms of time integrated and resolved photoluminescence (TIPL and TRPL). Large hexagonal crystallites and better crystalline quality were observed from the ZnO film on sapphire. Also, both the TIPL and TRPL showed a significant difference as the substrate changed. In particular, a detected sharp contrast in the result of TRPL measurement is due to the different defect structure and the lattice strain and stress of ZnO films on different substrates.

Original languageEnglish
Pages (from-to)623-627
Number of pages5
JournalSolid State Communications
Volume126
Issue number11
DOIs
Publication statusPublished - 2003 Jun 1

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Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Structural properties
sapphire
Optical properties
optical properties
Substrates
Defect structures
Crystallites
X ray diffraction analysis
crystallites
Atomic force microscopy
Photoluminescence
atomic force microscopy
Crystalline materials
photoluminescence
Thin films
Crystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Bang, Kyu Hyun ; Hwang, Deuk Kyu ; Jeong, Min Chang ; Sohn, Kee Sun ; Myoung, Jae Min. / Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD. In: Solid State Communications. 2003 ; Vol. 126, No. 11. pp. 623-627.
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Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD. / Bang, Kyu Hyun; Hwang, Deuk Kyu; Jeong, Min Chang; Sohn, Kee Sun; Myoung, Jae Min.

In: Solid State Communications, Vol. 126, No. 11, 01.06.2003, p. 623-627.

Research output: Contribution to journalArticle

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T1 - Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD

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AU - Hwang, Deuk Kyu

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AB - ZnO thin films were grown on c-plane sapphire and GaAs (001) substrates by metalorganic chemical vapor deposition. Atomic force microscopy and double-crystal X-ray diffractometry were utilized to investigate the structural properties of the ZnO films. The optical properties of ZnO films were also investigated in terms of time integrated and resolved photoluminescence (TIPL and TRPL). Large hexagonal crystallites and better crystalline quality were observed from the ZnO film on sapphire. Also, both the TIPL and TRPL showed a significant difference as the substrate changed. In particular, a detected sharp contrast in the result of TRPL measurement is due to the different defect structure and the lattice strain and stress of ZnO films on different substrates.

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