Comparative study for SRAM cells in near and sub-threshold region

Y. H. Yang, J. H. Park, S. C. Song, F. Yang, J. Wang, G. Yeap, S. O. Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low power circuit is an important concern for portable and battery operated applications. An attractive method to achieve low power consumption is supply voltage scaling. However, lowering the supply voltage causes a problem of stability in circuit, especially a static random access memory (SRAM). Since the SRAM occupies a large portion of the system-on-a-chip (SoC), the SRAM cell is typically designed using very small transistors for high integration, which causes the large mismatch between transistors in the SRAM cell. Thus, as supply voltage scales down, the static noise margin (SNM) of the 6T SRAM can limit the supply voltage scaling. The stability of read operation is especially sensitive to voltage scaling. To deal with these problems, recently proposed SRAM cells decouple the storage node from the bitline. In this paper, we analyze recently proposed SRAM cells for low voltage operation using 22 nm FinFET model.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2013, CSTIC 2013
Pages93-98
Number of pages6
Edition1
DOIs
Publication statusPublished - 2013 Apr 12
EventChina Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China
Duration: 2013 Mar 192013 Mar 21

Publication series

NameECS Transactions
Number1
Volume52
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2013, CSTIC 2013
CountryChina
CityShanghai
Period13/3/1913/3/21

Fingerprint

Data storage equipment
Transistors
Electric potential
Networks (circuits)
Computer systems
Electric power utilization
Voltage scaling

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yang, Y. H., Park, J. H., Song, S. C., Yang, F., Wang, J., Yeap, G., & Jung, S. O. (2013). Comparative study for SRAM cells in near and sub-threshold region. In China Semiconductor Technology International Conference 2013, CSTIC 2013 (1 ed., pp. 93-98). (ECS Transactions; Vol. 52, No. 1). https://doi.org/10.1149/05201.0093ecst
Yang, Y. H. ; Park, J. H. ; Song, S. C. ; Yang, F. ; Wang, J. ; Yeap, G. ; Jung, S. O. / Comparative study for SRAM cells in near and sub-threshold region. China Semiconductor Technology International Conference 2013, CSTIC 2013. 1. ed. 2013. pp. 93-98 (ECS Transactions; 1).
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Yang, YH, Park, JH, Song, SC, Yang, F, Wang, J, Yeap, G & Jung, SO 2013, Comparative study for SRAM cells in near and sub-threshold region. in China Semiconductor Technology International Conference 2013, CSTIC 2013. 1 edn, ECS Transactions, no. 1, vol. 52, pp. 93-98, China Semiconductor Technology International Conference 2013, CSTIC 2013, Shanghai, China, 13/3/19. https://doi.org/10.1149/05201.0093ecst

Comparative study for SRAM cells in near and sub-threshold region. / Yang, Y. H.; Park, J. H.; Song, S. C.; Yang, F.; Wang, J.; Yeap, G.; Jung, S. O.

China Semiconductor Technology International Conference 2013, CSTIC 2013. 1. ed. 2013. p. 93-98 (ECS Transactions; Vol. 52, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Yang YH, Park JH, Song SC, Yang F, Wang J, Yeap G et al. Comparative study for SRAM cells in near and sub-threshold region. In China Semiconductor Technology International Conference 2013, CSTIC 2013. 1 ed. 2013. p. 93-98. (ECS Transactions; 1). https://doi.org/10.1149/05201.0093ecst