Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices

J. H. Yum, Jungwoo Oh, Todd W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO 2, Al 2O 3, or BeO between the HfO 2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO 2 gate stack exhibited high performance and reliability characteristics, including a 34 improvement in drive current, slightly better reduction in subthreshold swing, 42 increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

Original languageEnglish
Article number359580
JournalActive and Passive Electronic Components
Volume2012
DOIs
Publication statusPublished - 2012 Nov 19

Fingerprint

Beryllia
MOS devices
MOSFET devices
Capacitors
Metals
Atomic layer deposition
Electron mobility
Gate dielectrics
Leakage currents
Oxides
Oxide films
Electric fields
Electric potential
Substrates
beryllium oxide
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO 2, Al 2O 3, or BeO between the HfO 2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO 2 gate stack exhibited high performance and reliability characteristics, including a 34 improvement in drive current, slightly better reduction in subthreshold swing, 42 increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.",
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Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices. / Yum, J. H.; Oh, Jungwoo; Hudnall, Todd W.; Bielawski, C. W.; Bersuker, G.; Banerjee, S. K.

In: Active and Passive Electronic Components, Vol. 2012, 359580, 19.11.2012.

Research output: Contribution to journalArticle

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AU - Yum, J. H.

AU - Oh, Jungwoo

AU - Hudnall, Todd W.

AU - Bielawski, C. W.

AU - Bersuker, G.

AU - Banerjee, S. K.

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