Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices

J. H. Yum, J. Oh, Todd W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

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