Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors

Jeong M. Choi, Jiyoul Lee, D. K. Hwang, Jae Hoon Kim, Seongil Im, Eugene Kim

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Abstract

We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent Ni Ox source/drain electrodes and Si O2 p+ -Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with pentacene-based TFTs, the tetracene-TFT exhibited superior potentials as a photodetector in the visible and ultraviolet range although it showed a field mobility (μ=0.003 cm2 V s) which is two orders of magnitude lower than that of the pentacene-based TFT (μ=∼0.3 cm2 V s). The tetracene-TFT displayed a high photo-to-dark current ratio (Iph Idark) of 3× 103, while that of the pentacene-TFT was only ∼10.

Original languageEnglish
Article number043508
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number4
DOIs
Publication statusPublished - 2006 Feb 6

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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