Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors

Youngseo An, Changmin Lee, Sungho Choi, Jeongkeun Song, Young Chul Byun, Dambi Park, Jiyoung Kim, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

Abstract

The effectiveness of trimethylaluminum (TMA) and tetrakis(dimethylamido)titanium (TDMAT) pretreatments on GaSb substrates were compared by examining the interfacial and capacitance-voltage (C-V) characteristics of Al2O3/p-type GaSb capacitors. In addition, for sample preparation, the temperature-dependent surface reactivity of GaSb was confirmed by examining the impact of the atomic layer deposition (ALD) loading temperature (stand-by temperature in air). An increase in the loading temperature from 65 to 150 °C in air ambient degraded the interfacial and C-V properties, which confirms the importance of the processing temperature for GaSb-based devices. Both in situ TMA and TDMAT pretreatments at 65 °C prior to the ALD of Al2O3 (150 °C) were effective in decreasing the amount of the interface oxide and the interface state density. While a similar degree of frequency dispersion in the C-V accumulation region was observed in the ALD-Al2O3/GaSb capacitor samples with and without TMA pretreatment, it largely increased for the TDMAT-pretreated sample, probably due to the formation of a Ti-oxide interlayer.

Original languageEnglish
Article number415103
JournalJournal of Physics D: Applied Physics
Volume50
Issue number41
DOIs
Publication statusPublished - 2017 Sep 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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