Abstract
The effectiveness of trimethylaluminum (TMA) and tetrakis(dimethylamido)titanium (TDMAT) pretreatments on GaSb substrates were compared by examining the interfacial and capacitance-voltage (C-V) characteristics of Al2O3/p-type GaSb capacitors. In addition, for sample preparation, the temperature-dependent surface reactivity of GaSb was confirmed by examining the impact of the atomic layer deposition (ALD) loading temperature (stand-by temperature in air). An increase in the loading temperature from 65 to 150 °C in air ambient degraded the interfacial and C-V properties, which confirms the importance of the processing temperature for GaSb-based devices. Both in situ TMA and TDMAT pretreatments at 65 °C prior to the ALD of Al2O3 (150 °C) were effective in decreasing the amount of the interface oxide and the interface state density. While a similar degree of frequency dispersion in the C-V accumulation region was observed in the ALD-Al2O3/GaSb capacitor samples with and without TMA pretreatment, it largely increased for the TDMAT-pretreated sample, probably due to the formation of a Ti-oxide interlayer.
| Original language | English |
|---|---|
| Article number | 415103 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 50 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - 2017 Sep 19 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors. / An, Youngseo; Lee, Changmin; Choi, Sungho; Song, Jeongkeun; Byun, Young Chul; Park, Dambi; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub.
In: Journal of Physics D: Applied Physics, Vol. 50, No. 41, 415103, 19.09.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors
AU - An, Youngseo
AU - Lee, Changmin
AU - Choi, Sungho
AU - Song, Jeongkeun
AU - Byun, Young Chul
AU - Park, Dambi
AU - Kim, Jiyoung
AU - Cho, Mann-Ho
AU - Kim, Hyoungsub
PY - 2017/9/19
Y1 - 2017/9/19
N2 - The effectiveness of trimethylaluminum (TMA) and tetrakis(dimethylamido)titanium (TDMAT) pretreatments on GaSb substrates were compared by examining the interfacial and capacitance-voltage (C-V) characteristics of Al2O3/p-type GaSb capacitors. In addition, for sample preparation, the temperature-dependent surface reactivity of GaSb was confirmed by examining the impact of the atomic layer deposition (ALD) loading temperature (stand-by temperature in air). An increase in the loading temperature from 65 to 150 °C in air ambient degraded the interfacial and C-V properties, which confirms the importance of the processing temperature for GaSb-based devices. Both in situ TMA and TDMAT pretreatments at 65 °C prior to the ALD of Al2O3 (150 °C) were effective in decreasing the amount of the interface oxide and the interface state density. While a similar degree of frequency dispersion in the C-V accumulation region was observed in the ALD-Al2O3/GaSb capacitor samples with and without TMA pretreatment, it largely increased for the TDMAT-pretreated sample, probably due to the formation of a Ti-oxide interlayer.
AB - The effectiveness of trimethylaluminum (TMA) and tetrakis(dimethylamido)titanium (TDMAT) pretreatments on GaSb substrates were compared by examining the interfacial and capacitance-voltage (C-V) characteristics of Al2O3/p-type GaSb capacitors. In addition, for sample preparation, the temperature-dependent surface reactivity of GaSb was confirmed by examining the impact of the atomic layer deposition (ALD) loading temperature (stand-by temperature in air). An increase in the loading temperature from 65 to 150 °C in air ambient degraded the interfacial and C-V properties, which confirms the importance of the processing temperature for GaSb-based devices. Both in situ TMA and TDMAT pretreatments at 65 °C prior to the ALD of Al2O3 (150 °C) were effective in decreasing the amount of the interface oxide and the interface state density. While a similar degree of frequency dispersion in the C-V accumulation region was observed in the ALD-Al2O3/GaSb capacitor samples with and without TMA pretreatment, it largely increased for the TDMAT-pretreated sample, probably due to the formation of a Ti-oxide interlayer.
UR - http://www.scopus.com/inward/record.url?scp=85030178431&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85030178431&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aa874a
DO - 10.1088/1361-6463/aa874a
M3 - Article
AN - SCOPUS:85030178431
VL - 50
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 41
M1 - 415103
ER -