Comparative study of various latch-type sense amplifiers

Taehui Na, Seung Han Woo, Jisu Kim, Hanwool Jeong, Seongook Jung

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

When the input voltage difference of a sense amplifier (SA) exceeds the offset voltage (VOS), the SA correctly detects it and outputs a large signal. However, when the input voltage is in a certain region, the SA can fail to sense the input voltage difference even if it is sufficiently large. This input voltage region is defined as the sensing dead zone of the SA. Because sensing dead zones differ depending on SAs and the input voltages to the SA differ depending on the memory devices, analyzing the sensing dead zone is very important. In this brief, we analyze the sensing dead zones of the most popular latch-type SAs: voltage-and current-latched SAs. Furthermore, a suitable latch-type SA scheme is suggested for various SA input voltages in terms of sensing delay, power consumption, and PDP, using a 65-nm predictive technology model at a VDD of 1.1 V.

Original languageEnglish
Article number6468116
Pages (from-to)425-429
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume22
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

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Electric potential
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All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Na, Taehui ; Woo, Seung Han ; Kim, Jisu ; Jeong, Hanwool ; Jung, Seongook. / Comparative study of various latch-type sense amplifiers. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2014 ; Vol. 22, No. 2. pp. 425-429.
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Comparative study of various latch-type sense amplifiers. / Na, Taehui; Woo, Seung Han; Kim, Jisu; Jeong, Hanwool; Jung, Seongook.

In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 22, No. 2, 6468116, 01.02.2014, p. 425-429.

Research output: Contribution to journalArticle

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