Comparative study of WL driving method for high-capacity NAND flash memory

Junyoung Ko, Younghwi Yang, Seong Ook Jung, Jisu Kim, Cheon An Lee, Young Sun Min, Jin Young Chun, Moosung Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, we demonstrated comparative study of the WL driving method in 256-Gb VNAND with 16KB page size. The fixed pulse width (FPW) which uses the fixed WL pulse width with incremental voltage has a large tPROG due to the decreased Vth shift in the later ISPP loop. The incremental pulse width (IPW) which incrementally increases the programming voltage and pulse width overcomes the small Vth shift problem in the later loop. In addition, the optimization methods for FPW and IPW are presented to obtain a small tPROG considering the narrow Vth distribution of NAND cell after programming operation. The comparison of the WL driving methods is performed by HSPICE simulation using the 0.25-μm PTM model with the parasitic RC in 16KB page size.

Original languageEnglish
Title of host publicationInternational Conference on Electronics, Information, and Communications, ICEIC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467380164
DOIs
Publication statusPublished - 2016 Sep 7
Event15th International Conference on Electronics, Information, and Communications, ICEIC 2016 - Danang, Viet Nam
Duration: 2016 Jan 272016 Jan 30

Publication series

NameInternational Conference on Electronics, Information, and Communications, ICEIC 2016

Other

Other15th International Conference on Electronics, Information, and Communications, ICEIC 2016
CountryViet Nam
CityDanang
Period16/1/2716/1/30

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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  • Cite this

    Ko, J., Yang, Y., Jung, S. O., Kim, J., Lee, C. A., Min, Y. S., Chun, J. Y., & Kim, M. (2016). Comparative study of WL driving method for high-capacity NAND flash memory. In International Conference on Electronics, Information, and Communications, ICEIC 2016 [7562960] (International Conference on Electronics, Information, and Communications, ICEIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELINFOCOM.2016.7562960