Comparative study of WL driving method for high-capacity NAND flash memory

Junyoung Ko; Younghwi Yang; Seong Ook Jung; Jisu Kim; Cheon An Lee; Young Sun Min; Jin Young Chun; Moosung Kim

doi:10.1109/ELINFOCOM.2016.7562960

Comparative study of WL driving method for high-capacity NAND flash memory

Junyoung Ko, Younghwi Yang, Seong Ook Jung, Jisu Kim, Cheon An Lee, Young Sun Min, Jin Young Chun, Moosung Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this work, we demonstrated comparative study of the WL driving method in 256-Gb VNAND with 16KB page size. The fixed pulse width (FPW) which uses the fixed WL pulse width with incremental voltage has a large tPROG due to the decreased Vth shift in the later ISPP loop. The incremental pulse width (IPW) which incrementally increases the programming voltage and pulse width overcomes the small Vth shift problem in the later loop. In addition, the optimization methods for FPW and IPW are presented to obtain a small tPROG considering the narrow Vth distribution of NAND cell after programming operation. The comparison of the WL driving methods is performed by HSPICE simulation using the 0.25-μm PTM model with the parasitic RC in 16KB page size.

Original language	English
Title of host publication	International Conference on Electronics, Information, and Communications, ICEIC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467380164
DOIs	https://doi.org/10.1109/ELINFOCOM.2016.7562960
Publication status	Published - 2016 Sep 7
Event	15th International Conference on Electronics, Information, and Communications, ICEIC 2016 - Danang, Viet Nam Duration: 2016 Jan 27 → 2016 Jan 30

Publication series

Name	International Conference on Electronics, Information, and Communications, ICEIC 2016

Other

Other	15th International Conference on Electronics, Information, and Communications, ICEIC 2016
Country/Territory	Viet Nam
City	Danang
Period	16/1/27 → 16/1/30

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Control and Systems Engineering

Access to Document

10.1109/ELINFOCOM.2016.7562960

Cite this

Ko, J., Yang, Y., Jung, S. O., Kim, J., Lee, C. A., Min, Y. S., Chun, J. Y., & Kim, M. (2016). Comparative study of WL driving method for high-capacity NAND flash memory. In International Conference on Electronics, Information, and Communications, ICEIC 2016 [7562960] (International Conference on Electronics, Information, and Communications, ICEIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELINFOCOM.2016.7562960

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title = "Comparative study of WL driving method for high-capacity NAND flash memory",

abstract = "In this work, we demonstrated comparative study of the WL driving method in 256-Gb VNAND with 16KB page size. The fixed pulse width (FPW) which uses the fixed WL pulse width with incremental voltage has a large tPROG due to the decreased Vth shift in the later ISPP loop. The incremental pulse width (IPW) which incrementally increases the programming voltage and pulse width overcomes the small Vth shift problem in the later loop. In addition, the optimization methods for FPW and IPW are presented to obtain a small tPROG considering the narrow Vth distribution of NAND cell after programming operation. The comparison of the WL driving methods is performed by HSPICE simulation using the 0.25-μm PTM model with the parasitic RC in 16KB page size.",

author = "Junyoung Ko and Younghwi Yang and Jung, {Seong Ook} and Jisu Kim and Lee, {Cheon An} and Min, {Young Sun} and Chun, {Jin Young} and Moosung Kim",

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Ko, J, Yang, Y, Jung, SO, Kim, J, Lee, CA, Min, YS, Chun, JY & Kim, M 2016, Comparative study of WL driving method for high-capacity NAND flash memory. in International Conference on Electronics, Information, and Communications, ICEIC 2016., 7562960, International Conference on Electronics, Information, and Communications, ICEIC 2016, Institute of Electrical and Electronics Engineers Inc., 15th International Conference on Electronics, Information, and Communications, ICEIC 2016, Danang, Viet Nam, 16/1/27. https://doi.org/10.1109/ELINFOCOM.2016.7562960

Comparative study of WL driving method for high-capacity NAND flash memory. / Ko, Junyoung; Yang, Younghwi; Jung, Seong Ook et al.

International Conference on Electronics, Information, and Communications, ICEIC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7562960 (International Conference on Electronics, Information, and Communications, ICEIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ko, Junyoung

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AU - Lee, Cheon An

AU - Min, Young Sun

AU - Chun, Jin Young

AU - Kim, Moosung

PY - 2016/9/7

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N2 - In this work, we demonstrated comparative study of the WL driving method in 256-Gb VNAND with 16KB page size. The fixed pulse width (FPW) which uses the fixed WL pulse width with incremental voltage has a large tPROG due to the decreased Vth shift in the later ISPP loop. The incremental pulse width (IPW) which incrementally increases the programming voltage and pulse width overcomes the small Vth shift problem in the later loop. In addition, the optimization methods for FPW and IPW are presented to obtain a small tPROG considering the narrow Vth distribution of NAND cell after programming operation. The comparison of the WL driving methods is performed by HSPICE simulation using the 0.25-μm PTM model with the parasitic RC in 16KB page size.

AB - In this work, we demonstrated comparative study of the WL driving method in 256-Gb VNAND with 16KB page size. The fixed pulse width (FPW) which uses the fixed WL pulse width with incremental voltage has a large tPROG due to the decreased Vth shift in the later ISPP loop. The incremental pulse width (IPW) which incrementally increases the programming voltage and pulse width overcomes the small Vth shift problem in the later loop. In addition, the optimization methods for FPW and IPW are presented to obtain a small tPROG considering the narrow Vth distribution of NAND cell after programming operation. The comparison of the WL driving methods is performed by HSPICE simulation using the 0.25-μm PTM model with the parasitic RC in 16KB page size.

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Ko J, Yang Y, Jung SO, Kim J, Lee CA, Min YS et al. Comparative study of WL driving method for high-capacity NAND flash memory. In International Conference on Electronics, Information, and Communications, ICEIC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7562960. (International Conference on Electronics, Information, and Communications, ICEIC 2016). doi: 10.1109/ELINFOCOM.2016.7562960

Comparative study of WL driving method for high-capacity NAND flash memory

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