Comparative study on growth characteristics and electrical properties of ZrO 2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Hanearl Jung, Il Kwon Oh, Seungmin Yeo, Hyungjun Kim, Su Jeong Lee, Yun Cheol Kim, Jae Min Myoung, Soo Hyun Kim, Jun Hyung Lim, Sunhee Lee

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3 Citations (Scopus)

Abstract

The deposition of high-quality ZrO 2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C 5 H 5 )Zr[N(CH 3 ) 2 ] 3 as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO 2 prepared under various deposition conditions. The ZrO 2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO 2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO 2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I on -I off ratios (>10 8 ) and low off-currents (<10 −11 A). In addition, ZrO 2 -based TFT showed high reliability against a negative V th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO 2 films. Thus, the authors believe that P-PE-CVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput.

Original languageEnglish
Article number031510
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number3
DOIs
Publication statusPublished - 2017 May 1

Fingerprint

Atomic layer deposition
Thin film transistors
Plasma enhanced chemical vapor deposition
atomic layer epitaxy
Oxide films
Electric properties
transistors
electrical properties
vapor deposition
Plasmas
oxides
thin films
Stoichiometry
Leakage currents
Hysteresis
Capacitors
Permittivity
Metals
Display devices
Throughput

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Comparative study on growth characteristics and electrical properties of ZrO 2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors",
abstract = "The deposition of high-quality ZrO 2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C 5 H 5 )Zr[N(CH 3 ) 2 ] 3 as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO 2 prepared under various deposition conditions. The ZrO 2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO 2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO 2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I on -I off ratios (>10 8 ) and low off-currents (<10 −11 A). In addition, ZrO 2 -based TFT showed high reliability against a negative V th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO 2 films. Thus, the authors believe that P-PE-CVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput.",
author = "Hanearl Jung and Oh, {Il Kwon} and Seungmin Yeo and Hyungjun Kim and Lee, {Su Jeong} and Kim, {Yun Cheol} and Myoung, {Jae Min} and Kim, {Soo Hyun} and Lim, {Jun Hyung} and Sunhee Lee",
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T1 - Comparative study on growth characteristics and electrical properties of ZrO 2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

AU - Jung, Hanearl

AU - Oh, Il Kwon

AU - Yeo, Seungmin

AU - Kim, Hyungjun

AU - Lee, Su Jeong

AU - Kim, Yun Cheol

AU - Myoung, Jae Min

AU - Kim, Soo Hyun

AU - Lim, Jun Hyung

AU - Lee, Sunhee

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The deposition of high-quality ZrO 2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C 5 H 5 )Zr[N(CH 3 ) 2 ] 3 as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO 2 prepared under various deposition conditions. The ZrO 2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO 2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO 2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I on -I off ratios (>10 8 ) and low off-currents (<10 −11 A). In addition, ZrO 2 -based TFT showed high reliability against a negative V th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO 2 films. Thus, the authors believe that P-PE-CVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput.

AB - The deposition of high-quality ZrO 2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C 5 H 5 )Zr[N(CH 3 ) 2 ] 3 as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO 2 prepared under various deposition conditions. The ZrO 2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO 2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO 2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I on -I off ratios (>10 8 ) and low off-currents (<10 −11 A). In addition, ZrO 2 -based TFT showed high reliability against a negative V th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO 2 films. Thus, the authors believe that P-PE-CVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput.

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