Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Young Jin Lee, Doo Jin Choi, Sung Soon Kim, Hong Lim Lee, Hae Doo Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalSurface and Coatings Technology
Volume177-178
DOIs
Publication statusPublished - 2004 Jan 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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