Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Young Jin Lee, Doo Jin Choi, Sung Soon Kim, Hong Lim Lee, Hae Doo Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalSurface and Coatings Technology
Volume177-178
DOIs
Publication statusPublished - 2004 Jan 30

Fingerprint

diluents
Chemical vapor deposition
Gases
vapor deposition
gases
silicon carbides
temperature profiles
Temperature
temperature
low pressure
simulation
chambers
Silicon carbide
atmospheres

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{d03e33472513402e809dfaafbf487544,
title = "Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data",
abstract = "Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.",
author = "Lee, {Young Jin} and Choi, {Doo Jin} and Kim, {Sung Soon} and Lee, {Hong Lim} and Kim, {Hae Doo}",
year = "2004",
month = "1",
day = "30",
doi = "10.1016/j.surfcoat.2003.09.018",
language = "English",
volume = "177-178",
pages = "415--419",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data. / Lee, Young Jin; Choi, Doo Jin; Kim, Sung Soon; Lee, Hong Lim; Kim, Hae Doo.

In: Surface and Coatings Technology, Vol. 177-178, 30.01.2004, p. 415-419.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

AU - Lee, Young Jin

AU - Choi, Doo Jin

AU - Kim, Sung Soon

AU - Lee, Hong Lim

AU - Kim, Hae Doo

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

AB - Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

UR - http://www.scopus.com/inward/record.url?scp=1342331928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342331928&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2003.09.018

DO - 10.1016/j.surfcoat.2003.09.018

M3 - Article

VL - 177-178

SP - 415

EP - 419

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -