Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Engineering

• Temperature 100%
• Experimental Result 33%
• Simulated Result 33%
• Growth Behavior 33%
• Simulation Result 33%
• Deposition System 33%
• Process Variable 33%
• Computational Simulation 33%
• Temperature Profile 33%
• Reaction Chamber 33%
• Dilute Gas 33%
• Models 33%
• Growth Rate 33%
• Low Pressure 33%

Chemistry

• Gas Velocity 100%
• Reaction Temperature 100%
• Diluting Agent 66%
• Gas 66%
• Liquid Film 66%
• Procedure 33%
• Pressure 33%
• Computer Simulation 33%

Material Science

• Liquid Films 66%
• Gas 66%
• Growth Rate 33%
• Protective Atmosphere 33%