Comparison of growth rate at oxidation of Si1-xGex nanowires

Sang Yeon Kim, Hyun Jin Chang, Han Kyu Seong, Heon Jin Choi, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The oxidation behaviors of Si1-xGex nanowires were investigated using TEM analysis. Thicker nanowires had higher oxide growth rates. Si1-xGex and silicon nanowires exhibited a saturation tendency as the oxidation time increased. The oxide growth rate of Si1.xGex nanowires was slightly faster than that of silicon nanowires. Differences in germanium content also affect the oxidation behavior.

Original languageEnglish
Title of host publicationECS Transactions - Nanotechnology (General) - 213th ECS Meeting
Pages7-12
Number of pages6
Edition18
DOIs
Publication statusPublished - 2008 Dec 1
EventNanotechnology General Session - 213th Meeting of the Electrochemical Society - Phoenix, AZ, United States
Duration: 2008 May 182008 May 23

Publication series

NameECS Transactions
Number18
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherNanotechnology General Session - 213th Meeting of the Electrochemical Society
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kim, S. Y., Chang, H. J., Seong, H. K., Choi, H. J., & Ko, D. H. (2008). Comparison of growth rate at oxidation of Si1-xGex nanowires. In ECS Transactions - Nanotechnology (General) - 213th ECS Meeting (18 ed., pp. 7-12). (ECS Transactions; Vol. 13, No. 18). https://doi.org/10.1149/1.3005392