Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Jungwoo Oh; Jeff Huang; Yen Ting Chen; Injo Ok; Kanghoon Jeon; Se Hoon Lee; Barry Sassman; Wei Yip Loh; Hi Deok Lee; Dea Hong Ko; Prashant Majhi; Paul Kirsch; Raj Jammy

doi:10.1016/j.tsf.2011.06.025

Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Jungwoo Oh, Jeff Huang, Yen Ting Chen, Injo Ok, Kanghoon Jeon, Se Hoon Lee, Barry Sassman, Wei Yip Loh, Hi Deok Lee, Dea Hong Ko, Prashant Majhi, Paul Kirsch, Raj Jammy

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10^{- 3}-10^{- 5} Ω cm², which is significantly higher than the 10^{- 7}-10^{- 8} Ω cm² of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

Original language	English
Pages (from-to)	442-444
Number of pages	3
Journal	Thin Solid Films
Volume	520
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2011.06.025
Publication status	Published - 2011 Oct 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Oh, J., Huang, J., Chen, Y. T., Ok, I., Jeon, K., Lee, S. H., Sassman, B., Loh, W. Y., Lee, H. D., Ko, D. H., Majhi, P., Kirsch, P., & Jammy, R. (2011). Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors. Thin Solid Films, 520(1), 442-444. https://doi.org/10.1016/j.tsf.2011.06.025

Oh, Jungwoo ; Huang, Jeff ; Chen, Yen Ting ; Ok, Injo ; Jeon, Kanghoon ; Lee, Se Hoon ; Sassman, Barry ; Loh, Wei Yip ; Lee, Hi Deok ; Ko, Dea Hong ; Majhi, Prashant ; Kirsch, Paul ; Jammy, Raj. / Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors. In: Thin Solid Films. 2011 ; Vol. 520, No. 1. pp. 442-444.

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title = "Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors",

abstract = "We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10- 3-10- 5 Ω cm2, which is significantly higher than the 10- 7-10- 8 Ω cm2 of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.",

author = "Jungwoo Oh and Jeff Huang and Chen, {Yen Ting} and Injo Ok and Kanghoon Jeon and Lee, {Se Hoon} and Barry Sassman and Loh, {Wei Yip} and Lee, {Hi Deok} and Ko, {Dea Hong} and Prashant Majhi and Paul Kirsch and Raj Jammy",

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Oh, J, Huang, J, Chen, YT, Ok, I, Jeon, K, Lee, SH, Sassman, B, Loh, WY, Lee, HD, Ko, DH, Majhi, P, Kirsch, P & Jammy, R 2011, 'Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors', Thin Solid Films, vol. 520, no. 1, pp. 442-444. https://doi.org/10.1016/j.tsf.2011.06.025

Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors. / Oh, Jungwoo; Huang, Jeff; Chen, Yen Ting; Ok, Injo; Jeon, Kanghoon; Lee, Se Hoon; Sassman, Barry; Loh, Wei Yip; Lee, Hi Deok; Ko, Dea Hong; Majhi, Prashant; Kirsch, Paul; Jammy, Raj.

In: Thin Solid Films, Vol. 520, No. 1, 31.10.2011, p. 442-444.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

AU - Oh, Jungwoo

AU - Huang, Jeff

AU - Chen, Yen Ting

AU - Ok, Injo

AU - Jeon, Kanghoon

AU - Lee, Se Hoon

AU - Sassman, Barry

AU - Loh, Wei Yip

AU - Lee, Hi Deok

AU - Ko, Dea Hong

AU - Majhi, Prashant

AU - Kirsch, Paul

AU - Jammy, Raj

PY - 2011/10/31

Y1 - 2011/10/31

N2 - We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10- 3-10- 5 Ω cm2, which is significantly higher than the 10- 7-10- 8 Ω cm2 of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

AB - We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10- 3-10- 5 Ω cm2, which is significantly higher than the 10- 7-10- 8 Ω cm2 of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

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