Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Jungwoo Oh, Jeff Huang, Yen Ting Chen, Injo Ok, Kanghoon Jeon, Se Hoon Lee, Barry Sassman, Wei Yip Loh, Hi Deok Lee, Dea Hong Ko, Prashant Majhi, Paul Kirsch, Raj Jammy

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10- 3-10- 5 Ω cm2, which is significantly higher than the 10- 7-10- 8 Ω cm2 of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

Original languageEnglish
Pages (from-to)442-444
Number of pages3
JournalThin Solid Films
Volume520
Issue number1
DOIs
Publication statusPublished - 2011 Oct 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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