Comparison of solution-processed and sputtered indium gallium zinc oxide thin film transistors for display applications

Marcus Herrmann, Steffen Hoehla, Norbert Fruehauf, Dong Lim Kim, Sang Hoon Oh, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have compared bottom gate TFTs produced within an international collaboration using sputtered as well as spin coated solution-based IGZO. The optimized material compositions and the processing conditions were varied due to the difference of deposition methods.

Original languageEnglish
Title of host publication31st International Display Research Conference 2011, EuroDisplay 2011
Pages353-356
Number of pages4
Publication statusPublished - 2011 Dec 1
Event31st International Display Research Conference 2011, EuroDisplay 2011 - Arcachon, France
Duration: 2011 Sep 192011 Sep 22

Publication series

NameSID Conference Record of the International Display Research Conference
ISSN (Print)1083-1312

Other

Other31st International Display Research Conference 2011, EuroDisplay 2011
CountryFrance
CityArcachon
Period11/9/1911/9/22

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Herrmann, M., Hoehla, S., Fruehauf, N., Kim, D. L., Oh, S. H., & Kim, H. J. (2011). Comparison of solution-processed and sputtered indium gallium zinc oxide thin film transistors for display applications. In 31st International Display Research Conference 2011, EuroDisplay 2011 (pp. 353-356). (SID Conference Record of the International Display Research Conference).