Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

K. S. Jeon, J. H. Sung, M. W. Lee, H. Y. Song, E. A. Lee, S. O. Kim, Heon-Jin Choi, H. Y. Shin, W. H. Park, Y. I. Jang, M. G. Kang, Y. H. Choi, J. S. Lee, Dae Hong Ko, H. Y. Ryu

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Abstract

We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

Original languageEnglish
Pages (from-to)5264-5266
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Jeon, K. S., Sung, J. H., Lee, M. W., Song, H. Y., Lee, E. A., Kim, S. O., Choi, H-J., Shin, H. Y., Park, W. H., Jang, Y. I., Kang, M. G., Choi, Y. H., Lee, J. S., Ko, D. H., & Ryu, H. Y. (2015). Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates. Journal of Nanoscience and Nanotechnology, 15(7), 5264-5266. https://doi.org/10.1166/jnn.2015.10408