Comparison of the crystallization behaviors in As-deposited and melt-quenched N-doped Ge2Sb2Te5 thin films

Kihoon Do, Dokyu Lee, Jun Hyun Bae, Dae Hong Ko, Hyunchul Sohn, Mann Ho Cho

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Abstract

The crystallization behavior of nitrogen-doped Ge2Sb 2Te5 (NGST) thin films was examined using a static laser heating method and transmission electron microscopy. Reflectance changes were examined, and the fraction of crystalline phase present was measured on a nanosecond time scale for various laser powers and duration times. A modified laser sequence was employed to determine the crystallization of the melt-quenched amorphous phase. Compared to an as-deposited NGST, the melt-quenched NGST showed a significantly faster crystallization with a shorter incubation time. The microstructures of the melt-quenched NGST systems demonstrated the presence of a number of fine crystalline grains upon crystallization, which is far different from the case of an as-deposited NGST. The findings indicate that the grain size is smaller in the crystallized NGST with a higher nitrogen content in the melt-quenched amorphous films.

Original languageEnglish
Pages (from-to)H347-H351
JournalJournal of the Electrochemical Society
Volume158
Issue number4
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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