Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Byung Du Ahn; Hyun Soo Shin; Hyun Jae Kim; Jin Seong Park; Jae Kyeong Jeong

doi:10.1063/1.3028340

Comparison of the effects of Ar and H₂ plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Byung Du Ahn, Hyun Soo Shin, Hyun Jae Kim, Jin Seong Park, Jae Kyeong Jeong

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

196 Citations (Scopus)

Abstract

We proposed a homojunctioned amorphous InGaZnO (a -IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a -IGZO channel layer using Ar and H₂ plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H₂ plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm² /V s, an on/off ratio of 1.2×10 ⁷, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

Original language	English
Article number	203506
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3028340
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) [No. R0A-2007-000-10044-0(2007)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3028340

Cite this

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title = "Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors",

abstract = "We proposed a homojunctioned amorphous InGaZnO (a -IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a -IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2 /V s, an on/off ratio of 1.2×10 7, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.",

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AU - Shin, Hyun Soo

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AU - Park, Jin Seong

AU - Jeong, Jae Kyeong

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