Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Byung Du Ahn, Hyun Soo Shin, Hyun Jae Kim, Jin Seong Park, Jae Kyeong Jeong

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

We proposed a homojunctioned amorphous InGaZnO (a -IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a -IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2 /V s, an on/off ratio of 1.2×10 7, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume93
Issue number20
DOIs
Publication statusPublished - 2008 Dec 2

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gallium oxides
zinc oxides
indium
transistors
thin films
threshold voltage
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors. / Du Ahn, Byung; Shin, Hyun Soo; Kim, Hyun Jae; Park, Jin Seong; Jeong, Jae Kyeong.

In: Applied Physics Letters, Vol. 93, No. 20, 203506, 02.12.2008.

Research output: Contribution to journalArticle

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AU - Du Ahn, Byung

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