We proposed a homojunctioned amorphous InGaZnO (a -IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a -IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2 /V s, an on/off ratio of 1.2×10 7, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) [No. R0A-2007-000-10044-0(2007)].
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)