Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics

Yu Xia, Jeong Ho Cho, Jiyoul Lee, P. Paul Ruden, C. Daniel Frisbie

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

A systematic comparison of the field-effect mobilities in polymer thin-film transistors (TFTs) and single-crystal organic field effect transistors (OFET) as a function of tunable gate insulator dielectric constant and gate-induced charge density, was studied. The channel space between the semiconductor and the gate with liquids of varying dielectric constants was filled. Single-crystal transistors were fabricated by placing the long axis of a single crystal across the PDMS gap. The metal-coated features on the PDMS stamp were used as source drain, and gate electrodes, while the gap served as a gate dielectric layer. Electrical characterization of the transistors was performed using a Lakeshore TTP4 probe station with Keithley 237 and 6517A electrometers. A wetting front propagated through the whole channel was clearly observed, which indicates the filling of the gap. The charge transport in single crystal transistors exhibit a completely different behavior, with the most striking phenomenon being the strong decrease in mobility with increased polarizability of the gate dielectric.

Original languageEnglish
Pages (from-to)2174-2179
Number of pages6
JournalAdvanced Materials
Volume21
Issue number21
DOIs
Publication statusPublished - 2009 Jun 5

Fingerprint

Gate dielectrics
Carrier concentration
Polymers
Transistors
Single crystals
Vacuum
Liquids
Permittivity
Electrometers
Organic field effect transistors
Thin film transistors
Charge density
Polymer films
Wetting
Charge transfer
Metals
Semiconductor materials
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "A systematic comparison of the field-effect mobilities in polymer thin-film transistors (TFTs) and single-crystal organic field effect transistors (OFET) as a function of tunable gate insulator dielectric constant and gate-induced charge density, was studied. The channel space between the semiconductor and the gate with liquids of varying dielectric constants was filled. Single-crystal transistors were fabricated by placing the long axis of a single crystal across the PDMS gap. The metal-coated features on the PDMS stamp were used as source drain, and gate electrodes, while the gap served as a gate dielectric layer. Electrical characterization of the transistors was performed using a Lakeshore TTP4 probe station with Keithley 237 and 6517A electrometers. A wetting front propagated through the whole channel was clearly observed, which indicates the filling of the gap. The charge transport in single crystal transistors exhibit a completely different behavior, with the most striking phenomenon being the strong decrease in mobility with increased polarizability of the gate dielectric.",
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Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics. / Xia, Yu; Cho, Jeong Ho; Lee, Jiyoul; Ruden, P. Paul; Frisbie, C. Daniel.

In: Advanced Materials, Vol. 21, No. 21, 05.06.2009, p. 2174-2179.

Research output: Contribution to journalArticle

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