Abstract
A systematic comparison of the field-effect mobilities in polymer thin-film transistors (TFTs) and single-crystal organic field effect transistors (OFET) as a function of tunable gate insulator dielectric constant and gate-induced charge density, was studied. The channel space between the semiconductor and the gate with liquids of varying dielectric constants was filled. Single-crystal transistors were fabricated by placing the long axis of a single crystal across the PDMS gap. The metal-coated features on the PDMS stamp were used as source drain, and gate electrodes, while the gap served as a gate dielectric layer. Electrical characterization of the transistors was performed using a Lakeshore TTP4 probe station with Keithley 237 and 6517A electrometers. A wetting front propagated through the whole channel was clearly observed, which indicates the filling of the gap. The charge transport in single crystal transistors exhibit a completely different behavior, with the most striking phenomenon being the strong decrease in mobility with increased polarizability of the gate dielectric.
| Original language | English |
|---|---|
| Pages (from-to) | 2174-2179 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 21 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2009 Jun 5 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics. / Xia, Yu; Cho, Jeong Ho; Lee, Jiyoul; Ruden, P. Paul; Frisbie, C. Daniel.
In: Advanced Materials, Vol. 21, No. 21, 05.06.2009, p. 2174-2179.Research output: Contribution to journal › Article
TY - JOUR
T1 - Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics
AU - Xia, Yu
AU - Cho, Jeong Ho
AU - Lee, Jiyoul
AU - Ruden, P. Paul
AU - Frisbie, C. Daniel
PY - 2009/6/5
Y1 - 2009/6/5
N2 - A systematic comparison of the field-effect mobilities in polymer thin-film transistors (TFTs) and single-crystal organic field effect transistors (OFET) as a function of tunable gate insulator dielectric constant and gate-induced charge density, was studied. The channel space between the semiconductor and the gate with liquids of varying dielectric constants was filled. Single-crystal transistors were fabricated by placing the long axis of a single crystal across the PDMS gap. The metal-coated features on the PDMS stamp were used as source drain, and gate electrodes, while the gap served as a gate dielectric layer. Electrical characterization of the transistors was performed using a Lakeshore TTP4 probe station with Keithley 237 and 6517A electrometers. A wetting front propagated through the whole channel was clearly observed, which indicates the filling of the gap. The charge transport in single crystal transistors exhibit a completely different behavior, with the most striking phenomenon being the strong decrease in mobility with increased polarizability of the gate dielectric.
AB - A systematic comparison of the field-effect mobilities in polymer thin-film transistors (TFTs) and single-crystal organic field effect transistors (OFET) as a function of tunable gate insulator dielectric constant and gate-induced charge density, was studied. The channel space between the semiconductor and the gate with liquids of varying dielectric constants was filled. Single-crystal transistors were fabricated by placing the long axis of a single crystal across the PDMS gap. The metal-coated features on the PDMS stamp were used as source drain, and gate electrodes, while the gap served as a gate dielectric layer. Electrical characterization of the transistors was performed using a Lakeshore TTP4 probe station with Keithley 237 and 6517A electrometers. A wetting front propagated through the whole channel was clearly observed, which indicates the filling of the gap. The charge transport in single crystal transistors exhibit a completely different behavior, with the most striking phenomenon being the strong decrease in mobility with increased polarizability of the gate dielectric.
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U2 - 10.1002/adma.200803437
DO - 10.1002/adma.200803437
M3 - Article
AN - SCOPUS:67649297605
VL - 21
SP - 2174
EP - 2179
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 21
ER -