Complementary driving between 2D heterostructures and surface functionalization for surpassing binary logic devices

Hyeonje Son, Haeju Choi, Jaeho Jeon, Young Jae Kim, Seunghyuk Choi, Jeong Ho Cho, Sungjoo Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Recently, for overcoming the fundamental limits o conventional silicon technology, multivalued logic (MVL) circuit based on two-dimensional (2D) materials have received significan attention for reducing the power consumption and the complexity of integrated circuits. Compared with the conventional silicon complementary metal oxide semiconductor technology, new functional heterostructures comprising 2D materials can be readily implemented, owing to their unique inherent electrical properties Furthermore, their process integration does not pose issues o lattice mismatch at junction interfaces. This facilitates the realization of new functional logic gate circuit configurations However, the reported three-valued NOT gates (ternary inverters) based on 2D materials require stringent operating conditions and complex fabrication processes to obtain three distinct logic states. Herein, a general structure of MVL devices based on a simple series connection of 2D materials with partial surface functionalization is demonstrated. By arranging three 2D materials exhibiting p-type, ambipolar, and n-type conductivities, ternary inverter circuits can be established based on the complementary driving between 2D heterotransistors. This ternary inverter circuit can be further improved for quaternary inverter circuits by controlling the charge neutral point of partial ambipolar 2D materials using surface functionalization, which is an effective and nondestructive doping method for 2D materials.

Original languageEnglish
Pages (from-to)8692-8699
Number of pages8
JournalACS Applied Materials and Interfaces
Volume13
Issue number7
DOIs
Publication statusPublished - 2021 Feb 24

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Korean government (MSIP) (grant numbers: 2018R1D1A1A09081931, 2020R1A4A2002806, and 2020M3F3A2A03082047). This work was supported by Samsung Electronics Co., Ltd. (IO201215-08197-01).

Publisher Copyright:
© 2021 American Chemical Society

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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