Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon

Dae Hyeong Kim, Jong-Hyun Ahn, Hoon Sik Kim, Keon Jae Lee, Tae Ho Kim, Chang Jae Yu, Ralph G. Nuzzo, John A. Rogers

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as ∼150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

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Logic gates
Silicon
Plastics
Crystalline materials
Flexible electronics
Electric potential
Substrates
Formability
Printing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, Dae Hyeong ; Ahn, Jong-Hyun ; Kim, Hoon Sik ; Lee, Keon Jae ; Kim, Tae Ho ; Yu, Chang Jae ; Nuzzo, Ralph G. ; Rogers, John A. / Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 1. pp. 73-76.
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Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon. / Kim, Dae Hyeong; Ahn, Jong-Hyun; Kim, Hoon Sik; Lee, Keon Jae; Kim, Tae Ho; Yu, Chang Jae; Nuzzo, Ralph G.; Rogers, John A.

In: IEEE Electron Device Letters, Vol. 29, No. 1, 01.01.2008, p. 73-76.

Research output: Contribution to journalArticle

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AB - CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as ∼150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.

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