Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.
Bibliographical noteFunding Information:
This is supported by National Science Foundation under Grant No. DMI-0328162 and U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 7ER46471, through the Materials Research Laboratory and Center for Microanalysis of Materials (DE-FG02-07ER46453) at the University of Illinois at Urbana-Champaign.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)