Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Dae Hyeong Kim, Won Mook Choi, Jong Hyun Ahn, Hoon Sik Kim, Jizhou Song, Yonggang Huang, Zhuangjian Liu, Chun Lu, Chan Ghee Koh, John A. Rogers

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

Original languageEnglish
Article number044102
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This is supported by National Science Foundation under Grant No. DMI-0328162 and U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 7ER46471, through the Materials Research Laboratory and Center for Microanalysis of Materials (DE-FG02-07ER46453) at the University of Illinois at Urbana-Champaign.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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