In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.
Bibliographical noteFunding Information:
This work was supported by the KIST Institutional Program (No. 2E26380), the National Research Foundation of Korea (NRF) grant (No. 2010-0017457) and the National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) by the Korea government (MSIP). H.C.K. acknowledges the support of KU-KIST Institutional Program.
© The Author(s) 2017.
All Science Journal Classification (ASJC) codes