Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe2

Sungjae Hong, Kang Lib Kim, Yongjae Cho, Hyunmin Cho, Ji Hoon Park, Cheolmin Park, Seongil Im

Research output: Contribution to journalArticle


Ferroelectric nonvolatile memory (FeNVM) field effect transistors (FETs) are reported using p-channel MoTe2 and P(VDF-TrFE) ferroelectric polymer, and furthermore a complementary type memory cell is demonstrated coupling p- and n-channel MoTe2 FETs. A top-gate p-FET with P(VDF-TrFE) and a bottom-gate n-FET with Al2O3 dielectric are integrated as one cell. Such a complementary type cell is more desirable research path in respect of power consumption but rare to find in 2D-based memory reports. Among many 2D semiconductors MoTe2 is selected, because p-type MoTe2-based FeNVM is not reported yet, and also because it is relatively easy to obtain both p- and n-channel from the homogeneous MoTe2. The integrated device also operates as a complementary metal oxide semiconductor inverter in a small voltage range from 0 to ≈2.5 V, but primarily works as a FeNVM circuit when p-channel with top P(VDF-TrFE) is biased with high voltages over the coercive electric field (Ec) of the polymer. The bottom gate n-channel transistor operates as a switching device in the FeNVM cell, allowing voltage output signals during device operations. It is concluded that the complementary type FeNVM cell is practical and novel enough to report as a first time demonstration based on 2D MoTe2.

Original languageEnglish
Article number2000479
JournalAdvanced Electronic Materials
Issue number9
Publication statusPublished - 2020 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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