Ferroelectric nonvolatile memory (FeNVM) field effect transistors (FETs) are reported using p-channel MoTe2 and P(VDF-TrFE) ferroelectric polymer, and furthermore a complementary type memory cell is demonstrated coupling p- and n-channel MoTe2 FETs. A top-gate p-FET with P(VDF-TrFE) and a bottom-gate n-FET with Al2O3 dielectric are integrated as one cell. Such a complementary type cell is more desirable research path in respect of power consumption but rare to find in 2D-based memory reports. Among many 2D semiconductors MoTe2 is selected, because p-type MoTe2-based FeNVM is not reported yet, and also because it is relatively easy to obtain both p- and n-channel from the homogeneous MoTe2. The integrated device also operates as a complementary metal oxide semiconductor inverter in a small voltage range from 0 to ≈2.5 V, but primarily works as a FeNVM circuit when p-channel with top P(VDF-TrFE) is biased with high voltages over the coercive electric field (Ec) of the polymer. The bottom gate n-channel transistor operates as a switching device in the FeNVM cell, allowing voltage output signals during device operations. It is concluded that the complementary type FeNVM cell is practical and novel enough to report as a first time demonstration based on 2D MoTe2.
Bibliographical noteFunding Information:
S.H. and K.L.M. contributed equally to this work. The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). The authors also acknowledge the financial support from NRF, funded by Korean government (MEST) (No. 2018M3D1A1058536). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF funded by the Ministry of Education (NRF‐2019R1I1A1A01063644). S.H. acknowledges the tuition support from the Hyundai Motor Chung Mong‐Koo Foundation.
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials