Compositional changes in the channel layer of an amorphous InGaZn-O thin film transistor after thermal annealing

Jiyeon Kang, Su Jeong Lee, Chul Hong Kim, Gee Sung Chae, Myungchul Jun, Yong Kee Hwang, Woong Lee, Jae Min Myoung

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Abstract

In order to investigate the possible reason for the improved device performances of amorphous InGaZn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories.

Original languageEnglish
Article number065002
JournalSemiconductor Science and Technology
Volume27
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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