We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. R0A-2005-000-10011-0). It was also partially supported by the Second Stage of the Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)