Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Dongjo Kim, Chang Young Koo, Keunkyu Song, Youngmin Jeong, Joo Ho Moon

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.

Original languageEnglish
Article number103501
JournalApplied Physics Letters
Volume95
Issue number10
DOIs
Publication statusPublished - 2009 Sep 18

Fingerprint

gallium
transistors
gels
zinc oxides
indium oxides
oxides
thin films
diagrams
threshold voltage
indium
chemical composition
saturation
cations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Dongjo ; Koo, Chang Young ; Song, Keunkyu ; Jeong, Youngmin ; Moon, Joo Ho. / Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors. In: Applied Physics Letters. 2009 ; Vol. 95, No. 10.
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Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors. / Kim, Dongjo; Koo, Chang Young; Song, Keunkyu; Jeong, Youngmin; Moon, Joo Ho.

In: Applied Physics Letters, Vol. 95, No. 10, 103501, 18.09.2009.

Research output: Contribution to journalArticle

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