Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Dongjo Kim, Chang Young Koo, Keunkyu Song, Youngmin Jeong, Jooho Moon

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Abstract

We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.

Original languageEnglish
Article number103501
JournalApplied Physics Letters
Volume95
Issue number10
DOIs
Publication statusPublished - 2009 Sep 18

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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