Comprehensive layout and process optimization study of Si and III-V technology for sub-7nm node

C. Y. Kang, R. H. Baek, T. W. Kim, D. Ko, D. H. Kim, T. Michalak, C. Borst, D. Veksler, G. Bersuker, R. Hill, C. Hobbs, P. D. Kirsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work we present III-V device performance and its variability under various design and process parameters, as compared to Si devices, using MC simulation. III-V device compact/BSIM models are developed, including geometry-dependent parasitic RC. Compared to its Si counterpart, III-V devices exhibit superior performance in Ion, ring oscillator delay (t pd) and SRAM read time (tread). We calculated the N it target for mitigating increments of Ioff and subthreshold slopes. For both Si and III-V sub-7nm technology optimization, we propose a direction for technology design to improve performance and area scaling without variability penalty.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages5.3.1-5.3.4
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kang, C. Y., Baek, R. H., Kim, T. W., Ko, D., Kim, D. H., Michalak, T., Borst, C., Veksler, D., Bersuker, G., Hill, R., Hobbs, C., & Kirsch, P. D. (2013). Comprehensive layout and process optimization study of Si and III-V technology for sub-7nm node. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 5.3.1-5.3.4). [6724566] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724566