Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films

Youngbae Ahn; Jong Ho Lee; Gun Hwan Kim; Ji Woon Park; Jaeyeong Heo; Seung Wook Ryu; Young Seok Kim; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.1063/1.4767918

Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb₂O₅ films

Youngbae Ahn, Jong Ho Lee, Gun Hwan Kim, Ji Woon Park, Jaeyeong Heo, Seung Wook Ryu, Young Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/Sb₂O ₅/Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region.

Original language	English
Article number	114105
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4767918
Publication status	Published - 2012 Dec 1

Bibliographical note

Funding Information:
This work was supported by R&D Program of the Ministry of Knowledge and Economy (10039191), the Converging Research Center Program (2012K001299), and the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korean government.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.4767918

Cite this

@article{84e4ab7da7be46279facc87fd4e56f38,

title = "Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films",

abstract = "The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/Sb2O 5/Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region.",

author = "Youngbae Ahn and {Ho Lee}, Jong and {Hwan Kim}, Gun and {Woon Park}, Ji and Jaeyeong Heo and {Wook Ryu}, Seung and {Seok Kim}, Young and {Seong Hwang}, Cheol and {Joon Kim}, Hyeong",

note = "Funding Information: This work was supported by R&D Program of the Ministry of Knowledge and Economy (10039191), the Converging Research Center Program (2012K001299), and the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korean government.",

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doi = "10.1063/1.4767918",

language = "English",

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T1 - Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films

AU - Ahn, Youngbae

AU - Ho Lee, Jong

AU - Hwan Kim, Gun

AU - Woon Park, Ji

AU - Heo, Jaeyeong

AU - Wook Ryu, Seung

AU - Seok Kim, Young

AU - Seong Hwang, Cheol

AU - Joon Kim, Hyeong

N1 - Funding Information: This work was supported by R&D Program of the Ministry of Knowledge and Economy (10039191), the Converging Research Center Program (2012K001299), and the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korean government.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/Sb2O 5/Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region.

AB - The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/Sb2O 5/Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region.

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