We study conductance fluctuations of the edge-state sheath that forms in the integer quantum Hall effect from the coupled edge states of a GaAs/AlxGa1-xAs multilayer. Comparison of the measured variance in the vertical conductance to recent theoretical predictions for mesoscopic fluctuations suggests dephasing lengths of 1-10 μm around the sheath perimeter at low temperatures. However, inconsistencies in the estimated inelastic lengths indicate that present understanding of dephasing on the sheath is incomplete.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering