Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

Jaesung Son, Karan Banerjee, Matthew Brahlek, Nikesh Koirala, Seoung Ki Lee, Jong Hyun Ahn, Seongshik Oh, Hyunsoo Yang

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30 Citations (Scopus)


A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Original languageEnglish
Article number213114
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2013 Nov 18

Bibliographical note

Funding Information:
This work was partially supported by the Singapore Ministry of Education Academic Research Fund Tier 1 (R-263-000-A75-750), the National Research Foundation of Korea (NRF) grants funded by the Korean Government (2012R1A2A1A03006049) and by NSF DMR-0845464 and ONR N000141210456 at Rutgers.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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