Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

Jaesung Son, Karan Banerjee, Matthew Brahlek, Nikesh Koirala, Seoung Ki Lee, Jong Hyun Ahn, Seongshik Oh, Hyunsoo Yang

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23 Citations (Scopus)

Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Original languageEnglish
Article number213114
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
Publication statusPublished - 2013 Nov 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Son, J., Banerjee, K., Brahlek, M., Koirala, N., Lee, S. K., Ahn, J. H., Oh, S., & Yang, H. (2013). Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating. Applied Physics Letters, 103(21), [213114]. https://doi.org/10.1063/1.4833315