A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.
Bibliographical noteFunding Information:
This work was partially supported by the Singapore Ministry of Education Academic Research Fund Tier 1 (R-263-000-A75-750), the National Research Foundation of Korea (NRF) grants funded by the Korean Government (2012R1A2A1A03006049) and by NSF DMR-0845464 and ONR N000141210456 at Rutgers.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)