Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

Jaesung Son, Karan Banerjee, Matthew Brahlek, Nikesh Koirala, Seoung Ki Lee, Jong-Hyun Ahn, Seongshik Oh, Hyunsoo Yang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Original languageEnglish
Article number213114
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
Publication statusPublished - 2013 Nov 18

Fingerprint

insulators
modulation
liquids
thin films
room temperature
field effect transistors
transport properties
optical properties
impurities
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Son, Jaesung ; Banerjee, Karan ; Brahlek, Matthew ; Koirala, Nikesh ; Lee, Seoung Ki ; Ahn, Jong-Hyun ; Oh, Seongshik ; Yang, Hyunsoo. / Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating. In: Applied Physics Letters. 2013 ; Vol. 103, No. 21.
@article{ff81e7d8464944d6afdcfc0e807dcc01,
title = "Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating",
abstract = "A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365{\%} at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.",
author = "Jaesung Son and Karan Banerjee and Matthew Brahlek and Nikesh Koirala and Lee, {Seoung Ki} and Jong-Hyun Ahn and Seongshik Oh and Hyunsoo Yang",
year = "2013",
month = "11",
day = "18",
doi = "10.1063/1.4833315",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

Son, J, Banerjee, K, Brahlek, M, Koirala, N, Lee, SK, Ahn, J-H, Oh, S & Yang, H 2013, 'Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating', Applied Physics Letters, vol. 103, no. 21, 213114. https://doi.org/10.1063/1.4833315

Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating. / Son, Jaesung; Banerjee, Karan; Brahlek, Matthew; Koirala, Nikesh; Lee, Seoung Ki; Ahn, Jong-Hyun; Oh, Seongshik; Yang, Hyunsoo.

In: Applied Physics Letters, Vol. 103, No. 21, 213114, 18.11.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

AU - Son, Jaesung

AU - Banerjee, Karan

AU - Brahlek, Matthew

AU - Koirala, Nikesh

AU - Lee, Seoung Ki

AU - Ahn, Jong-Hyun

AU - Oh, Seongshik

AU - Yang, Hyunsoo

PY - 2013/11/18

Y1 - 2013/11/18

N2 - A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

AB - A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

UR - http://www.scopus.com/inward/record.url?scp=84888421563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888421563&partnerID=8YFLogxK

U2 - 10.1063/1.4833315

DO - 10.1063/1.4833315

M3 - Article

AN - SCOPUS:84888421563

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 213114

ER -