Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress

Jung Han Kang, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Conduction characteristics of amorphous InGaZnO thin-film transistors were investigated by applying constant drain current with gate bias (VGS) modulation. Constant drain current in the off-current (Ioff) level from the transfer characteristic was applied to the drain electrode and the measured drain voltage with the gate bias sweep. The normalized channel conductance (Gd) characteristics were extracted from transfer characteristics and the gate bias modulated drain voltage characteristics with constant drain current stress were compared with the characteristics. The drain voltage induced by the constant drain current stress showed simultaneous transition from off-state with generation current dominant region with increasing drain bias (VDS) to the turn-on state. The high electric field at the drain electrode edge was observed at the threshold voltage (VTH), which can affect the instability characteristics of TFTs.

Original languageEnglish
Pages (from-to)2164-2166
Number of pages3
JournalMicroelectronics Reliability
Volume54
Issue number9-10
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Drain current
Amorphous films
Thin film transistors
transistors
conduction
thin films
Electric potential
Electrodes
Threshold voltage
electric potential
Electric fields
Modulation
electrodes
threshold voltage
modulation
electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress",
abstract = "Conduction characteristics of amorphous InGaZnO thin-film transistors were investigated by applying constant drain current with gate bias (VGS) modulation. Constant drain current in the off-current (Ioff) level from the transfer characteristic was applied to the drain electrode and the measured drain voltage with the gate bias sweep. The normalized channel conductance (Gd) characteristics were extracted from transfer characteristics and the gate bias modulated drain voltage characteristics with constant drain current stress were compared with the characteristics. The drain voltage induced by the constant drain current stress showed simultaneous transition from off-state with generation current dominant region with increasing drain bias (VDS) to the turn-on state. The high electric field at the drain electrode edge was observed at the threshold voltage (VTH), which can affect the instability characteristics of TFTs.",
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Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress. / Kang, Jung Han; Cho, Edward Namkyu; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 54, No. 9-10, 01.01.2014, p. 2164-2166.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kang, Jung Han

AU - Cho, Edward Namkyu

AU - Yun, Ilgu

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AB - Conduction characteristics of amorphous InGaZnO thin-film transistors were investigated by applying constant drain current with gate bias (VGS) modulation. Constant drain current in the off-current (Ioff) level from the transfer characteristic was applied to the drain electrode and the measured drain voltage with the gate bias sweep. The normalized channel conductance (Gd) characteristics were extracted from transfer characteristics and the gate bias modulated drain voltage characteristics with constant drain current stress were compared with the characteristics. The drain voltage induced by the constant drain current stress showed simultaneous transition from off-state with generation current dominant region with increasing drain bias (VDS) to the turn-on state. The high electric field at the drain electrode edge was observed at the threshold voltage (VTH), which can affect the instability characteristics of TFTs.

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