Contact characteristics in GaN nanowire devices

Moon Ho Ham, Ji Hyuk Choi, Wonseok Hwang, Cheolmin Park, Woo Young Lee, Jae Min Myoung

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

GaN nanowire field-effect transistors were fabricated using single-crystalline GaN nanowires synthesized by thermal evaporation of GaN powder with NH3. They were found to be depletion mode transistors with an electron concentration of ∼107cm-1, electron mobility of 50cm2V-1s-1, and on/off current ratio of ∼102. Using the transmission line method, the resistivity of the GaN nanowires and specific contact resistivity were estimated to be 7.8 × 10-2Ωcm and 1.7 × 10 -5Ωcm2, respectively. The current transport at contacts was described by the thermionic emission with a barrier height of 68meV. The contact characteristics were improved by supplying excess carriers in the nanowires. These results will enable GaN nanowires to be used in reliable nanoscale devices.

Original languageEnglish
Pages (from-to)2203-2206
Number of pages4
JournalNanotechnology
Volume17
Issue number9
DOIs
Publication statusPublished - 2006 May 14

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Contact characteristics in GaN nanowire devices'. Together they form a unique fingerprint.

  • Cite this