Contact Effect of ReS2/Metal Interface

Jae Young Park, Hang Eun Joe, Hyong Seo Yoon, Sanghyuk Yoo, Taekyeong Kim, Keonwook Kang, Byung Kwon Min, Seong Chan Jun

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Rhenium disulfide (ReS2) has attracted immense interest as a promising two-dimensional material for optoelectronic devices owing to its outstanding photonic response based on its energy band gap's insensitivity to the layer thickness. Here, we theoretically calculated the electrical band structure of mono-, bi-, and trilayer ReS2 and experimentally found the work function to be 4.8 eV, which was shown to be independent of the layer thickness. We also evaluated the contact resistance of a ReS2 field-effect transistor using a Y-function method with various metal electrodes, including graphene. The ReS2 channel is a strong n-type semiconductor, thus a lower work function than that of metals tends to lead to a lower contact resistance. Moreover, the graphene electrodes, which were not chemically or physically bonded to ReS2, showed the lowest contact resistance, regardless of the work function, suggesting a significant Fermi-level pinning effect at the ReS2/metal interface. In addition, an asymmetric Schottky diode device was demonstrated using Ti or graphene for ohmic contacts and Pt or Pd for Schottky contacts. The ReS2-based transistor used in this study on the work function of ReS2 achieved the possibility of designing the next-generation nanologic devices.

Original languageEnglish
Pages (from-to)26325-26332
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number31
DOIs
Publication statusPublished - 2017 Aug 9

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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