Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Edward Namkyu Cho; Jung Han Kang; Ilgu Yun

doi:10.1016/j.cap.2011.01.017

Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Edward Namkyu Cho, Jung Han Kang, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (V_th) and degradation of subthreshold swing (S_SUB) were shown. In addition, it is also found that the field-effect mobility (μ_FE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (I_DS) was decreased for short-channel devices.

Original language	English
Pages (from-to)	1015-1019
Number of pages	5
Journal	Current Applied Physics
Volume	11
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2011.01.017
Publication status	Published - 2011 Jul

Bibliographical note

Funding Information:
This work was supported as a research project of Samsung Electronics.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2011.01.017

Cite this

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title = "Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors",

abstract = "Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.",

author = "Cho, {Edward Namkyu} and Kang, {Jung Han} and Ilgu Yun",

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T1 - Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

AU - Cho, Edward Namkyu

AU - Kang, Jung Han

AU - Yun, Ilgu

N1 - Funding Information: This work was supported as a research project of Samsung Electronics.

PY - 2011/7

Y1 - 2011/7

N2 - Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.

AB - Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.

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Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Abstract

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