Abstract
Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1015-1019 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors. / Cho, Edward Namkyu; Kang, Jung Han; Yun, Ilgu.
In: Current Applied Physics, Vol. 11, No. 4, 01.07.2011, p. 1015-1019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors
AU - Cho, Edward Namkyu
AU - Kang, Jung Han
AU - Yun, Ilgu
PY - 2011/7/1
Y1 - 2011/7/1
N2 - Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.
AB - Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (Vth) and degradation of subthreshold swing (SSUB) were shown. In addition, it is also found that the field-effect mobility (μFE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (IDS) was decreased for short-channel devices.
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U2 - 10.1016/j.cap.2011.01.017
DO - 10.1016/j.cap.2011.01.017
M3 - Article
AN - SCOPUS:79957544626
VL - 11
SP - 1015
EP - 1019
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 4
ER -