Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Edward Namkyu Cho; Jung Han Kang; Ilgu Yun

doi:10.1016/j.cap.2011.01.017

Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Edward Namkyu Cho, Jung Han Kang, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (V_th) and degradation of subthreshold swing (S_SUB) were shown. In addition, it is also found that the field-effect mobility (μ_FE) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (I_DS) was decreased for short-channel devices.

Original language	English
Pages (from-to)	1015-1019
Number of pages	5
Journal	Current Applied Physics
Volume	11
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2011.01.017
Publication status	Published - 2011 Jul 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2011.01.017

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Cho, E. N., Kang, J. H., & Yun, I. (2011). Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors. Current Applied Physics, 11(4), 1015-1019. https://doi.org/10.1016/j.cap.2011.01.017

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