In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.
|Number of pages||4|
|Journal||Thin Solid Films|
|Publication status||Published - 2000 Mar 1|
|Event||The Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices - Hong Kong, Hong Kong|
Duration: 1999 Jun 8 → 1999 Jun 11
Bibliographical noteFunding Information:
The authors (MWS and HCL) wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1999.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry