Contact resistance in interface of metal - Light emitting organic thin films

Moo Whan Shin, Ho Chul Lee, Jae Gyoung Lee, Youngkyoo Kim, Young Yi Jung, Sunwook Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.

Original languageEnglish
Pages (from-to)302-305
Number of pages4
JournalThin Solid Films
Volume363
Issue number1-2
Publication statusPublished - 2000 Mar 1

Fingerprint

Light Metals
Light metals
Contact resistance
contact resistance
Aluminum
aluminum
Thin films
thin films
metals
Silver
Cathodes
cathodes
silver
Oxides
Metals
oxides
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shin, M. W., Lee, H. C., Lee, J. G., Kim, Y., Jung, Y. Y., & Kim, S. (2000). Contact resistance in interface of metal - Light emitting organic thin films. Thin Solid Films, 363(1-2), 302-305.
Shin, Moo Whan ; Lee, Ho Chul ; Lee, Jae Gyoung ; Kim, Youngkyoo ; Jung, Young Yi ; Kim, Sunwook. / Contact resistance in interface of metal - Light emitting organic thin films. In: Thin Solid Films. 2000 ; Vol. 363, No. 1-2. pp. 302-305.
@article{631fb0730c8a486498cda4723a28e9fe,
title = "Contact resistance in interface of metal - Light emitting organic thin films",
abstract = "In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.",
author = "Shin, {Moo Whan} and Lee, {Ho Chul} and Lee, {Jae Gyoung} and Youngkyoo Kim and Jung, {Young Yi} and Sunwook Kim",
year = "2000",
month = "3",
day = "1",
language = "English",
volume = "363",
pages = "302--305",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Shin, MW, Lee, HC, Lee, JG, Kim, Y, Jung, YY & Kim, S 2000, 'Contact resistance in interface of metal - Light emitting organic thin films', Thin Solid Films, vol. 363, no. 1-2, pp. 302-305.

Contact resistance in interface of metal - Light emitting organic thin films. / Shin, Moo Whan; Lee, Ho Chul; Lee, Jae Gyoung; Kim, Youngkyoo; Jung, Young Yi; Kim, Sunwook.

In: Thin Solid Films, Vol. 363, No. 1-2, 01.03.2000, p. 302-305.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Contact resistance in interface of metal - Light emitting organic thin films

AU - Shin, Moo Whan

AU - Lee, Ho Chul

AU - Lee, Jae Gyoung

AU - Kim, Youngkyoo

AU - Jung, Young Yi

AU - Kim, Sunwook

PY - 2000/3/1

Y1 - 2000/3/1

N2 - In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.

AB - In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.

UR - http://www.scopus.com/inward/record.url?scp=0343192406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343192406&partnerID=8YFLogxK

M3 - Article

VL - 363

SP - 302

EP - 305

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Shin MW, Lee HC, Lee JG, Kim Y, Jung YY, Kim S. Contact resistance in interface of metal - Light emitting organic thin films. Thin Solid Films. 2000 Mar 1;363(1-2):302-305.