Contact resistance in interface of metal - Light emitting organic thin films

Moo Whan Shin; Ho Chul Lee; Jae Gyoung Lee; Youngkyoo Kim; Young Yi Jung; Sunwook Kim

doi:10.1016/s0040-6090(99)01021-4

Contact resistance in interface of metal - Light emitting organic thin films

Moo Whan Shin, Ho Chul Lee, Jae Gyoung Lee, Youngkyoo Kim, Young Yi Jung, Sunwook Kim

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

In this report, the specific contact resistance for the interface between the cathode metals and organic Alq₃ thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq₃/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10^-1 Ω/cm². The measurement of specific contact resistance for the samples with the structure of aluminum/Alq₃/aluminum was hindered by the formation of the Al₂O₃ layer in the interface between aluminum and Alq₃. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq₃ contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq₃ interface.

Original language	English
Pages (from-to)	302-305
Number of pages	4
Journal	Thin Solid Films
Volume	363
Issue number	1-2
DOIs	https://doi.org/10.1016/s0040-6090(99)01021-4
Publication status	Published - 2000 Mar 1
Event	The Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices - Hong Kong, Hong Kong Duration: 1999 Jun 8 → 1999 Jun 11

Bibliographical note

Funding Information:
The authors (MWS and HCL) wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1999.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/s0040-6090(99)01021-4

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title = "Contact resistance in interface of metal - Light emitting organic thin films",

abstract = "In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.",

author = "Shin, {Moo Whan} and Lee, {Ho Chul} and Lee, {Jae Gyoung} and Youngkyoo Kim and Jung, {Young Yi} and Sunwook Kim",

note = "Funding Information: The authors (MWS and HCL) wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1999.; The Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices ; Conference date: 08-06-1999 Through 11-06-1999",

year = "2000",

month = mar,

day = "1",

doi = "10.1016/s0040-6090(99)01021-4",

language = "English",

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T1 - Contact resistance in interface of metal - Light emitting organic thin films

AU - Shin, Moo Whan

AU - Lee, Ho Chul

AU - Lee, Jae Gyoung

AU - Kim, Youngkyoo

AU - Jung, Young Yi

AU - Kim, Sunwook

N1 - Funding Information: The authors (MWS and HCL) wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1999.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.

AB - In this report, the specific contact resistance for the interface between the cathode metals and organic Alq3 thin films were determined using the test pattern with a vertical structure between two contact pads. The samples with the structure of silver/Alq3/silver exhibited a linear current-voltage (I-V) characteristics and the specific contact resistance was calculated be in a range 1×10-1 Ω/cm2. The measurement of specific contact resistance for the samples with the structure of aluminum/Alq3/aluminum was hindered by the formation of the Al2O3 layer in the interface between aluminum and Alq3. The formation of oxide in the interface is believed to give rise to the Schottky characteristics and control the current transport across the cathode/organic interface. The barrier heights of the aluminum/Alq3 contact were calculated to be in a range 0.22 to 0.60 eV, which is lower than the barrier height from the nominally pure aluminum/Alq3 interface.

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U2 - 10.1016/s0040-6090(99)01021-4

DO - 10.1016/s0040-6090(99)01021-4

M3 - Conference article

AN - SCOPUS:0343192406

SN - 0040-6090

VL - 363

SP - 302

EP - 305

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - The Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices

Y2 - 8 June 1999 through 11 June 1999

ER -

Contact resistance in interface of metal - Light emitting organic thin films

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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