Contact resistance reduction between Ni–InGaAs and n-InGaAs via rapid thermal annealing in hydrogen atmosphere

Jeongchan Lee, Meng Li, Jeyoung Kim, Geonho Shin, Ga Won Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance (Rc) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% H2 and 4% H2 annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of Rc at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest Rc in 4% H2 sample, that is, higher current for 4% H2 sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalJournal of Semiconductor Technology and Science
Issue number2
Publication statusPublished - 2017 Apr

Bibliographical note

Funding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (G01201406010774) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University.

Publisher Copyright:
© 2017, Institute of Electronics Engineers of Korea. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Contact resistance reduction between Ni–InGaAs and n-InGaAs via rapid thermal annealing in hydrogen atmosphere'. Together they form a unique fingerprint.

Cite this