Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance (Rc) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% H2 and 4% H2 annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of Rc at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest Rc in 4% H2 sample, that is, higher current for 4% H2 sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.
Bibliographical noteFunding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (G01201406010774) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering