Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance (Rc) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% H2 and 4% H2 annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of Rc at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest Rc in 4% H2 sample, that is, higher current for 4% H2 sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.
Bibliographical noteFunding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (G01201406010774) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University.
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering