Continuous synthesis of silicon carbide whiskers

Heon-Jin Choi, June Gunn Lee

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

A two-step reaction scheme has been employed for the synthesis of SiC whiskers at 1450 °C under an argon or hydrogen flow. First, SiO vapour was generated via the carbothermal reduction of silica in a controlled manner. Second, the generated SiO vapour was reacted with carbon-carrying vapours such as CO and CH4, which resulted in the growth of SiC whiskers on a substrate away from the batch. A higher growth rate was observed in the hydrogen atmosphere due to the formation of CH4 which provides a more favourable reaction route. By the use of thermodynamic calculations, the preferred reaction routes have been selected for an efficient synthesis of SiC whiskers, and a continuous reactor has been designed. The system consists of a boat-train loaded with the silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. By pushing the boat-train into the hot zone at a fixed speed, SiO vapour is constantly generated. High-quality SiC whiskers have been grown on the substrate with diameters of 1-3 μm. The yield was about 30% based on the silicon input as SiO2 and silicon output as SiC whiskers. This demonstrates the feasibility of continuous production of high-quality SiC whiskers which does not require additional processes such as purification and classification.

Original languageEnglish
Pages (from-to)1982-1986
Number of pages5
JournalJournal of Materials Science
Volume30
Issue number8
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

Silicon carbide
Vapors
Boats
Silicon
Silicon Dioxide
Hydrogen
Substrates
Carbon
Silica
Carbothermal reduction
Graphite
Aluminum Oxide
Argon
Carbon Monoxide
Purification
Alumina
Iron
Thermodynamics
silicon carbide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Choi, Heon-Jin ; Lee, June Gunn. / Continuous synthesis of silicon carbide whiskers. In: Journal of Materials Science. 1995 ; Vol. 30, No. 8. pp. 1982-1986.
@article{fe43dc5d73ef4f0194fb84b1b6abdb80,
title = "Continuous synthesis of silicon carbide whiskers",
abstract = "A two-step reaction scheme has been employed for the synthesis of SiC whiskers at 1450 °C under an argon or hydrogen flow. First, SiO vapour was generated via the carbothermal reduction of silica in a controlled manner. Second, the generated SiO vapour was reacted with carbon-carrying vapours such as CO and CH4, which resulted in the growth of SiC whiskers on a substrate away from the batch. A higher growth rate was observed in the hydrogen atmosphere due to the formation of CH4 which provides a more favourable reaction route. By the use of thermodynamic calculations, the preferred reaction routes have been selected for an efficient synthesis of SiC whiskers, and a continuous reactor has been designed. The system consists of a boat-train loaded with the silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. By pushing the boat-train into the hot zone at a fixed speed, SiO vapour is constantly generated. High-quality SiC whiskers have been grown on the substrate with diameters of 1-3 μm. The yield was about 30{\%} based on the silicon input as SiO2 and silicon output as SiC whiskers. This demonstrates the feasibility of continuous production of high-quality SiC whiskers which does not require additional processes such as purification and classification.",
author = "Heon-Jin Choi and Lee, {June Gunn}",
year = "1995",
month = "1",
day = "1",
doi = "10.1007/BF00353022",
language = "English",
volume = "30",
pages = "1982--1986",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "8",

}

Continuous synthesis of silicon carbide whiskers. / Choi, Heon-Jin; Lee, June Gunn.

In: Journal of Materials Science, Vol. 30, No. 8, 01.01.1995, p. 1982-1986.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Continuous synthesis of silicon carbide whiskers

AU - Choi, Heon-Jin

AU - Lee, June Gunn

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A two-step reaction scheme has been employed for the synthesis of SiC whiskers at 1450 °C under an argon or hydrogen flow. First, SiO vapour was generated via the carbothermal reduction of silica in a controlled manner. Second, the generated SiO vapour was reacted with carbon-carrying vapours such as CO and CH4, which resulted in the growth of SiC whiskers on a substrate away from the batch. A higher growth rate was observed in the hydrogen atmosphere due to the formation of CH4 which provides a more favourable reaction route. By the use of thermodynamic calculations, the preferred reaction routes have been selected for an efficient synthesis of SiC whiskers, and a continuous reactor has been designed. The system consists of a boat-train loaded with the silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. By pushing the boat-train into the hot zone at a fixed speed, SiO vapour is constantly generated. High-quality SiC whiskers have been grown on the substrate with diameters of 1-3 μm. The yield was about 30% based on the silicon input as SiO2 and silicon output as SiC whiskers. This demonstrates the feasibility of continuous production of high-quality SiC whiskers which does not require additional processes such as purification and classification.

AB - A two-step reaction scheme has been employed for the synthesis of SiC whiskers at 1450 °C under an argon or hydrogen flow. First, SiO vapour was generated via the carbothermal reduction of silica in a controlled manner. Second, the generated SiO vapour was reacted with carbon-carrying vapours such as CO and CH4, which resulted in the growth of SiC whiskers on a substrate away from the batch. A higher growth rate was observed in the hydrogen atmosphere due to the formation of CH4 which provides a more favourable reaction route. By the use of thermodynamic calculations, the preferred reaction routes have been selected for an efficient synthesis of SiC whiskers, and a continuous reactor has been designed. The system consists of a boat-train loaded with the silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. By pushing the boat-train into the hot zone at a fixed speed, SiO vapour is constantly generated. High-quality SiC whiskers have been grown on the substrate with diameters of 1-3 μm. The yield was about 30% based on the silicon input as SiO2 and silicon output as SiC whiskers. This demonstrates the feasibility of continuous production of high-quality SiC whiskers which does not require additional processes such as purification and classification.

UR - http://www.scopus.com/inward/record.url?scp=0029288488&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029288488&partnerID=8YFLogxK

U2 - 10.1007/BF00353022

DO - 10.1007/BF00353022

M3 - Article

AN - SCOPUS:0029288488

VL - 30

SP - 1982

EP - 1986

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 8

ER -