Control of electrical conductivity of highly stacked zinc oxide nanocrystals by ultraviolet treatment

Wooje Han, Jiwan Kim, Hyung Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Zinc oxide (ZnO) nanocrystals (NCs) were synthesized using a modified sol-gel method. Ultraviolet (UV) treatment was performed under various atmospheres on the highly stacked ZnO NCs. The prepared NCs were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy, and atomic force microscopy to investigate their structural, electrical, and electrochemical properties. Through these analyses, the effect of the UV treatment on the chemical and electrical characteristics of ZnO NCs was established. According to the analyses, the organic ligands in the NCs were decomposed, and the particles were densified. The mobility of UV-treated ZnO NCs thin films increased to 1.4 cm 2 /Vs, almost 2 orders higher than the UV untreated ZnO thin films. It was confirmed that the recombination from oxygen vacancies of ZnO could be controlled by UV irradiation. As decreased oxygen vacancies, the band gap of ZnO NCs was increased from 3.2 eV to 3.27 eV.

Original languageEnglish
Article number6244
JournalScientific reports
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

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Zinc Oxide
Electric Conductivity
Nanoparticles
Oxygen
Atomic Force Microscopy
Polymethyl Methacrylate
Fourier Transform Infrared Spectroscopy
Atmosphere
X-Ray Diffraction
Electron Scanning Microscopy
Genetic Recombination
Spectrum Analysis
Gels
Ligands

All Science Journal Classification (ASJC) codes

  • General

Cite this

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title = "Control of electrical conductivity of highly stacked zinc oxide nanocrystals by ultraviolet treatment",
abstract = "Zinc oxide (ZnO) nanocrystals (NCs) were synthesized using a modified sol-gel method. Ultraviolet (UV) treatment was performed under various atmospheres on the highly stacked ZnO NCs. The prepared NCs were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy, and atomic force microscopy to investigate their structural, electrical, and electrochemical properties. Through these analyses, the effect of the UV treatment on the chemical and electrical characteristics of ZnO NCs was established. According to the analyses, the organic ligands in the NCs were decomposed, and the particles were densified. The mobility of UV-treated ZnO NCs thin films increased to 1.4 cm 2 /Vs, almost 2 orders higher than the UV untreated ZnO thin films. It was confirmed that the recombination from oxygen vacancies of ZnO could be controlled by UV irradiation. As decreased oxygen vacancies, the band gap of ZnO NCs was increased from 3.2 eV to 3.27 eV.",
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Control of electrical conductivity of highly stacked zinc oxide nanocrystals by ultraviolet treatment. / Han, Wooje; Kim, Jiwan; Park, Hyung Ho.

In: Scientific reports, Vol. 9, No. 1, 6244, 01.12.2019.

Research output: Contribution to journalArticle

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N2 - Zinc oxide (ZnO) nanocrystals (NCs) were synthesized using a modified sol-gel method. Ultraviolet (UV) treatment was performed under various atmospheres on the highly stacked ZnO NCs. The prepared NCs were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy, and atomic force microscopy to investigate their structural, electrical, and electrochemical properties. Through these analyses, the effect of the UV treatment on the chemical and electrical characteristics of ZnO NCs was established. According to the analyses, the organic ligands in the NCs were decomposed, and the particles were densified. The mobility of UV-treated ZnO NCs thin films increased to 1.4 cm 2 /Vs, almost 2 orders higher than the UV untreated ZnO thin films. It was confirmed that the recombination from oxygen vacancies of ZnO could be controlled by UV irradiation. As decreased oxygen vacancies, the band gap of ZnO NCs was increased from 3.2 eV to 3.27 eV.

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